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  53.0m Datasheet PDF File

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    IRF3711ZCL IRF3711ZCS IRF3711ZCLPBF IRF3711ZCSPBF

International Rectifier
Part No. IRF3711ZCL IRF3711ZCS IRF3711ZCLPBF IRF3711ZCSPBF
OCR Text ... V A c g g 380 79 40 0.53 -55 to + 175 W/C C W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from ...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 271.33K  /  11 Page

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    IRFS4410ZPBF IRFSL4410ZPBF IRFB4410ZPBF

IRF[International Rectifier]
Part No. IRFS4410ZPBF IRFSL4410ZPBF IRFB4410ZPBF
OCR Text ....3 V --- 38 57 ns --- 46 69 --- 53 80 nC TJ = 125C --- 82 120 --- 2.5 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) p-n junction diode. TJ = 25C, IS = 58A, VGS = 0V g TJ = 25C VR = 85V, TJ = 125C IF ...
Description HEXFET Power MOSFET

File Size 837.58K  /  11 Page

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    C1Q500 C1Q375 C1Q250 C1Q750 C1Q C1Q1 C1Q1.25 C1Q1.5 C1Q2 C1Q2.5 C1Q3 C1Q3.5 C1Q4 C1Q5 C1Q7

BEL[Bel Fuse Inc.]
Part No. C1Q500 C1Q375 C1Q250 C1Q750 C1Q C1Q1 C1Q1.25 C1Q1.5 C1Q2 C1Q2.5 C1Q3 C1Q3.5 C1Q4 C1Q5 C1Q7
OCR Text ...35 0.057 0.084 0.15 0.25 0.37 0.53 0.67 1.10 3.10 0.0001 0.0004 0.001 0.002 0.004 0.006 0.010 0.019 0.032 0.050 0.072 0.094 0.16 0.37 ...0m m +0 . 1 0 m m _ " +0 . 0 0 4") 0 .5 8 m + m (0 .0 2 3 - 0 .0 8 m m + "- 0 .0 0 3 ") 0 3 .0 (...
Description Surface Mount Very Fast-Acting Chip Fuse

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    FDS8858CZ

Fairchild Semiconductor
Part No. FDS8858CZ
OCR Text ... 2.7 6.1 3.4 8.5 14 18 10 20 35 53 10 29 24 46 ns ns ns ns nC nC nC (c)2007 Fairchild Semiconductor Corporation FDS8858CZ Rev.B 2 www.fairchildsemi.com FDS8858CZ Dual N & P-Channel PowerTrench(R) MOSFET Electrical Characteris...
Description Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ

File Size 301.29K  /  10 Page

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    G1420F31U G1420F31UF G1420

GMT[Global Mixed-mode Technology Inc]
Part No. G1420F31U G1420F31UF G1420
OCR Text ...2,43,44,45 46 47,48 49,50 51,52,53,54 IDD PO PD Total Harmonic Distortion Plus Noise vs Output Power 10 5 10 5 Total Harmonic Dist...0m 1 00m W 20 0m 500 m 1 2 3 0 .05 VDD=5V RL=3 BTL Av=-2V/V 0 .02 0 .01 20 5m 10m ...
Description 2W Stereo Audio Amplifier

File Size 373.97K  /  20 Page

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    PNA4S01M PNA4S02M PNA4S03M PNA4S04M

PANASONIC CORP
Panasonic Semiconductor
http://
Part No. PNA4S01M PNA4S02M PNA4S03M PNA4S04M
OCR Text ...nsitivity (SIR) of PNZ323B is 0.53 A when emission illuminance (H) is 12.45 W/ cm2. The maximum reception distance under these specifications is an assurance that TWH and TWL values will be within the tolerance ranges when 16 consecutive pu...
Description Bipolar Integrated Circuit with Photodetection Function

File Size 46.67K  /  3 Page

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    PNA4S11M PNA4S12M PNA4S13M PNA4S14M

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Panasonic Semiconductor
Part No. PNA4S11M PNA4S12M PNA4S13M PNA4S14M
OCR Text ...nsitivity (SIR) of PNZ323B is 0.53 A when emission illuminance (H) is 12.45 W/ cm2. The maximum reception distance under these specifications is an assurance that TWH and TWL values will be within the tolerance ranges when 16 consecutive pu...
Description Bipolar Integrated Circuit with Photodetection Function

File Size 47.29K  /  3 Page

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    VEC2301

Sanyo Semicon Device
Part No. VEC2301
OCR Text ...0.4 2.9 4.9 62 87 680 115 80 13 53 77 62 8.2 1.7 2.1 --0.88 --1.2 81 120 typ max --1.3 Unit V S m m pF pF pF ns ns ns ns nC nC nC V Switc...0m s 1m m s s op era tio n Operation in this area is limited by RDS(on). ...
Description    General-Purpose Switching Device Applications

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    WT2301 WT-2301

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Weitron Technology
Part No. WT2301 WT-2301
OCR Text ... Qgs Qgd - 13.9 17.6 87.7 53.9 11.9 1.96 3.49 -0.795 - nS nS nS nS nc nc nc V - -1.2 VSD Note: 1. Surface Mounted on...0m s DC Is 10 11 0.1 0.03 VDS=-4.5V Single Pulse TC =25 C 0.1 1 10 20 50 Q g ,TOTAL GATE...
Description Surface Mount P-Channel Enhancement Mode MOSFET

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    55GN01M

Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
Part No. 55GN01M
OCR Text ...3 58.38 58.17 57.40 56.02 55.05 53.73 51.74 S22 0.872 0.700 0.501 0.424 0.393 0.381 0.375 0.377 0.382 0.386 0.390 0.396 0.399 0.402 0.407 0.405 S22 --22.91 --35.46 --44.05 --46.75 --49.83 --53.19 --57.17 --61.74 --66.69 --71.55 --76.75 --82...
Description UHF Wide-band Low-noise Amplifier Applications
Pico-GET Series

File Size 25.82K  /  5 Page

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