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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
TDA2005 TDA2005M TDA2005S
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| OCR Text |
...z) Power Dissipation at Tcase = 60 C Storage and Junction Temperature Value 18 28 40 4.5 3.5 30 - 40 to 150 Unit V V V A A W C
(*) The ma...120V and width of 2ms can be applied at point A. This type of protection is ON when the supply volta... |
| Description |
20W BRIDGE AMPLIFIER FOR CAR RADIO 20W BRIDGE AMPLIFIER FOR CAR RADIO
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| File Size |
259.17K /
20 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSF10N60B
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| OCR Text |
...
10
20
30
40
50
60
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
(c)2001 Fairchild Semiconductor Corporation
Rev. B, No... |
| Description |
600V N-Channel MOSFET 6.9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
674.24K /
8 Page |
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