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PG5398 MPS4100 IRFF130 255352 ILC7081 T2N03 0805C IT2200J
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  800-2200 Datasheet PDF File

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    LT1793 LT1793ACN8 LT1793ACS8 LT1793AIN8 LT1793AIS8 LT1793CN8 LT1793CS8 LT1793IN8 LT1793IS8 1793F

LINER[Linear Technology]
Part No. LT1793 LT1793ACN8 LT1793ACS8 LT1793AIN8 LT1793AIS8 LT1793CN8 LT1793CS8 LT1793IN8 LT1793IS8 1793F
OCR Text ... 3600 2600 12.9 - 10.0 77 81 800 400 13.4 - 10.8 95 94 3400 2400 12.9 13.2 11.9 12.15 2.2 2.2 3.3 3.3 4.2 4.2 5.30 5.25 12.9 13....2200 13.1 12.1 3.2 3.1 4.2 4.2 5.40 5.35 1.3 1.9 13 300 2400 LT1793C/LT1793I MIN TYP MAX 1.6 2.0 ...
Description From old datasheet system
Low Noise, Picoampere Bias Current, JFET Input Op Amp
Low Noise/ Picoampere Bias Current/ JFET Input Op Amp

File Size 162.40K  /  12 Page

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    MB15C700 MB15C700PV MB15C700SERIES

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
Part No. MB15C700 MB15C700PV MB15C700SERIES
OCR Text ...PEC 100 200 300 400 500 600 700 800 900 PLLVDD = 2.3 V PLLVDD = 2.5 V PLLVDD = 2.7 V Input frequency fin (MHz) 2. OSCin input sensi...2200 pF 3.3 k 22000 pF VCOCNT 3000 pF VCOTNKO 1.5 pF 1. Measurement result Parameter VCO v...
Description Built-in IF Band Voltage Controlled Oscillator Mask ROM Frequency Synthesizer

File Size 75.55K  /  18 Page

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    MB15C703

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
Part No. MB15C703
OCR Text ...PEC 100 200 300 400 500 600 700 800 900 PLLVDD = 2.3 V PLLVDD = 2.5 V PLLVDD = 2.7 V Input frequency fin (MHz) 2. OSCin input sensitivity OSCin input sensitivity vs. input frequency 10 5 Input sensitivity POSC (dBm) 0 -5 ...
Description Built-in IF Band Voltage Controlled Oscillator Mask ROM Frequency Synthesizer

File Size 69.45K  /  16 Page

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    NE6510379A NE6510379A-T1

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NE6510379A NE6510379A-T1
OCR Text ... Data) S11 freq. (MHz) 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 MAG. 0.958 0.956 0.954 0.956 0.953 0.952 0.951 0.949 0.949 0.952 0.954 0.945 0.947 0.949 0.946 0.947 0.949 ANG. (deg.) 178.7 178.1 177....
Description 3 W L-BAND POWER GaAs HJ-FET 3瓦L波段功率GaAs黄建忠场效应

File Size 95.74K  /  8 Page

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    TC4467 TC4468 TC4469

MICROCHIP[Microchip Technology]
Part No. TC4467 TC4468 TC4469
OCR Text ...................................800 mW CERDIP .............................................................840 mW SOIC ........................2200 p 0 pF 140 120 2200 pF 100 tFALL (nsec) 1500 pF 120 100 tRISE (nsec) 1600 p pF 1000 p...
Description The TC446X family of four-output CMOS buffer/drivers are an expansion from our earlier single- and dual-output drivers. Each driver has been equipped with a two-input logic gate for added flexibility. The TC446X drivers can source up to 25
Logic-Input CMOS Quad Drivers

File Size 375.81K  /  22 Page

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    16FR120 16FR100 16F60 16F100 16F8 A16FR60M A16F10 A16F100 A16F100M A16F10M A16F120 A16F120M A16F20 A16F20M A16F40 A16F40

IRF[International Rectifier]
Part No. 16FR120 16FR100 16F60 16F100 16F8 A16FR60M A16F10 A16F100 A16F100M A16F10M A16F120 A16F120M A16F20 A16F20M A16F40 A16F40M A16F60 A16F60M A16FR10 A16FR100 A16FR100M A16FR10M A16FR120 A16FR120M A16FR20 A16FR20M A16FR40 A16FR40M A16FR60 16F 16FR20 16FR80 16F80 16FR40 16FR60 16F20 16F10 16F120 16FR10
OCR Text ...00 16f(r) 60 600 725 750 12 80 800 950 950 100 1000 1200 1150 120 1200 1400 1350 electrical specifications voltage ratings i f(av) max. ave...2200. fax: (905) 475 8801. ir germany: saalburgstrasse 157, 61350 bad homburg. tel: ++ 49 6172 9659...
Description 1200V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
100V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
400V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
800V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
STANDARD RECOVERY DIODES

File Size 70.38K  /  6 Page

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    BF904A BF904AR BF904AWR

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BF904A BF904AR BF904AWR
OCR Text ...mperature CAUTION f = 1 MHz f = 800 MHz Ts 110 C 2 Top view BF904A; BF904AR; BF904AWR PINNING PIN 1 2 3 4 DESCRIPTION source drain g...2200 2400 2600 2800 3000 Table 2 BF904A; BF904AR; BF904AWR Scattering parameters: VDS = 5 V; V...
Description N-channel dual gate MOS-FETs

File Size 114.42K  /  16 Page

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    BF904WR

NXP Semiconductors
Philips Semiconductors
Part No. BF904WR
OCR Text ...ance noise figure f = 1 MHz f = 800 MHz PARAMETER drain-source voltage CONDITIONS - - - - 22 - - - MIN. - - - - 25 2.2 25 2 TYP. MAX. 7 30 2...2200 2400 2600 2800 3000 Table 2 Scattering parameters: VDS =5 V; VG2-S = 4 V; ID = 10 mA s11 MAGNIT...
Description N-channel dual-gate MOS-FET

File Size 119.33K  /  12 Page

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    BF904 BF904R BF904_904R_5

NXP Semiconductors
Philips Semiconductors
Part No. BF904 BF904R BF904_904R_5
OCR Text ...ance noise figure f = 1 MHz f = 800 MHz 2 PARAMETER drain-source voltage CONDITIONS - - - - 22 - - - MIN. - - - - 25 2.2 25 2 TYP. MAX. 7 30...2200 2400 2600 2800 3000 Table 2 Scattering parameters: VDS =5 V; VG2-S = 4 V; ID = 10 mA S11 MAGNIT...
Description N-channel dual gate MOS-FETs
From old datasheet system

File Size 111.21K  /  16 Page

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    BFQ67R BFQ67 BFQ67W

Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
Part No. BFQ67R BFQ67 BFQ67W
OCR Text ... MHz VCE = 8 V, ZS = ZSopt, f = 800 MHz, IC = 5 mA VCE = 8 V, ZS = ZSopt, f = 800 MHz, IC = 15 mA VCE = 8 V, ZS = 50 W, f = 2 GHz, IC = 5 mA...2200 2500 2800 3000 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 100 300 500 800 100...
Description Silicon NPN Planar RF Transistor(集电极电0mA,低噪声小信号放大器应用的NPN平面型晶体管)
MINILINK UK ;
From old datasheet system

File Size 184.90K  /  12 Page

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