90ns. pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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90ns. Datasheet PDF File

For 90ns. Found Datasheets File :: 1373 Search Time::4.766ms
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				Hitachi,Ltd.
Part No.	2SK2175
OCR Text	...ns turn-off delay time t d(off) 90ns fall time t f 90ns body to drain diode forward voltage v df 1.3 v i f = 15 a, v gs = 0 body to drain diode reverse recovery time t rr 90nsi f = 15 a, v gs = 0, dif / dt = 50 a / m s note 1. pulse ...
Description	Silicon N-Channel MOS FET(N沟道MOSFET)
File Size	112.49K / 9 Page	View it Online	Download Datasheet

				优先(苏州)半导体有限公
Part No.	ES29DL160F-70WCI ES29DL400F-70WCI ES29DL320F-70WCI ES29DS160D-90WCI ES29DL160D-90WCI ES29BDS160D-90WCI ES29BDS320D-90WCI ES29BDS160FB-70WCI ES29BDS160F-70WCI ES29DL400D-90WCI ES29BDS400D-90WCI ES29BDS800FB-70WCI ES29BDS400DT-70WCI ES29BDS400F-70WCI ES29BDS800D-90WCI ES29BDS320E-70WCI ES29BDS320FB-70WCI ES29DL320FB-70WCI ES29DL320E-70WCI ES29BDS320F-70WCI ES29DL800FB-70WCI -ES29BDS400D-90WCI
OCR Text	... ? read access time - 70ns/90ns for normal vcc range ( 2.7v ~ 3.6v ) ? program and erase time - program time : 6us/byte, 8us/word ( typical ) - accelerated program ti me : 4us/word ( typical ) - sector erase time : 0....
Description	32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory 32兆（4米8/2M × 16），3.0伏的CMOS只，引导扇区闪存
File Size	766.96K / 58 Page	View it Online	Download Datasheet

				优先(苏州)半导体有限公
Part No.	ES29DL160E-90WC ES29DL640E-90WC ES29BDS160E-90WC ES29BDS320E-90WC ES29DL160E-90RTG ES29BDS640E-90WC ES29DS160E-90WC ES29DL320E-90WC ES29DL400FT-90RTG ES29DL800DB-80RTG ES29BDS160DB-80RTG ES29BDS160D-90RTG ES29BDS320ET-90RTG ES29BDS320D-90RTG ES29BDS400DB-80RTG ES29BDS800DB-80RTG ES29BDS640FT-80RTG ES29DL400D-70WCI
OCR Text	...? read access time - 70ns / 90ns / 120ns ? program and erase time - program time : 6us/byte, 8us/word ( typical ) - sector erase time : 0.7sec/sector ( typical ) ? power consumption (typical values) - 200na in standby o...
Description	8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
File Size	697.58K / 50 Page	View it Online	Download Datasheet

				优先(苏州)半导体有限公
Part No.	ES29BDS160DT-90TGI ES29BDS160ET-90TGI ES29BDS320FB-90TGI ES29BDS400ET-70WC ES29BDS160D-70WC ES29BDS160ET-70WC ES29BDS320DT-90TGI ES29BDS320ET-90TGI -ES29DL320FT-70WC
OCR Text	...? read access time - 70ns / 90ns ? program and erase time - program time : 6us/byte, 8us/word ( typical ) - sector erase time : 0.7sec/sector ( typical ) ? power consumption (typical values) - 200na in standby or automati...
Description	16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
File Size	719.27K / 53 Page	View it Online	Download Datasheet

				Macronix International Co., Ltd.
Part No.	23C1610-15 23C1610-10 23C1610-12
OCR Text	...f 100ua. ac characteristics:add 90ns grade item, deleted 200ns grade item. the output enable time (toe) is changed as 60ns instead of 70ns in 120ns grade item, and 70ns instead of 80ns in 150ns grade item. the output high z delay is changed...
Description	5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM
File Size	767.65K / 11 Page	View it Online	Download Datasheet

				Excel Semiconductor
Part No.	ES29LV160D
OCR Text	... ? read access time - 90ns/120n for normal vcc range ( 2.7v - 3.6v ) - 80ns for regulated vcc range ( 3.0v - 3.6v ) ? program and erase time - program time : 5us/byte, 7us/word ( typical ) - sector erase time : 0.7sec/...
Description	16Mbit CMOS
File Size	644.38K / 57 Page	View it Online	Download Datasheet

				Macronix International
Part No.	MX29LV640MB
OCR Text	...performance - fast access time: 90ns - page read time: 25ns - sector erase time: 0.5s (typ.) - 4 word/8 byte page read buffer - 16 word/ 32 byte write buffer: reduces programming time for multiple-word/byte updates low power consumption -...
Description	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
File Size	757.81K / 74 Page	View it Online	Download Datasheet

				意法半导
Part No.	M29W400T
OCR Text	...ad operations fast access time: 90ns fast programming time 10 m s by byte / 16 m s by word typical program/erase controller (p/e.c.) program byte-by-byte or word-by-word status register bits and ready/busy output memory blocks boot block...
Description	4Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(4M位闪速存储器)
File Size	32.22K / 4 Page	View it Online	Download Datasheet

				优先(苏州)半导体有限公
Part No.	ES29BDS160E-12RTG ES29DL160D-12RTG ES29BDS160F-12RTG ES29BDS160D-12RTG ES29BDS320F-12RTG ES29BDS320D-12RTG ES29BDS640FB-80RTG ES29BDS800D-12RTG
OCR Text	... ? read access time - 90ns/120n for normal vcc range ( 2.7v - 3.6v ) - 80ns for regulated vcc range ( 3.0v - 3.6v ) ? program and erase time - program time : 9us/ byte, 11us/word ( typical ) - accelerated program ti me...
Description	32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory 32兆（4米8/2M × 16），3.0伏的CMOS只，引导扇区闪存
File Size	604.95K / 59 Page	View it Online	Download Datasheet

For 90ns. Found Datasheets File :: 1373 Search Time::4.766ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |