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  base gate Datasheet PDF File

For base gate Found Datasheets File :: 14866    Search Time::2.438ms    
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    MRF140

MOTOROLA[Motorola, Inc]
Part No. MRF140
OCR Text .... . . . . . . . . . . . . . . . base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CES . . . . . . . . . . . . . . . . ...gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VDS(on) ID VCE(sat) . . . . . . . ....
Description N-CHANNEL MOS LINEAR RF POWER FET

File Size 162.25K  /  6 Page

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    MRF148

MOTOROLA[Motorola, Inc]
Part No. MRF148
OCR Text .... . . . . . . . . . . . . . . . base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CES . . . . . . . . . . . . . . . . ...gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VDS(on) VCE(sat) . . . . . . . . . ...
Description N-CHANNEL MOS LINEAR RF POWER FET

File Size 145.04K  /  6 Page

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    MRF150

MOTOROLA[Motorola, Inc]
Part No. MRF150
OCR Text .... . . . . . . . . . . . . . . . base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CES . . . . . . . . . . . . . . . . ...gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VDS(on) VCE(sat) . . . . . . . . . ...
Description N-CHANNEL MOS LINEAR RF POWER FET

File Size 146.86K  /  6 Page

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    MRF154

MOTOROLA[Motorola, Inc]
Part No. MRF154
OCR Text .... . . . . . . . . . . . . . . . base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CES . . . . . . . . . . . . . ...gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VDS(on) VCE(sat) . . . . . . . . . ...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 160.11K  /  8 Page

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    MRF173CQ

MACOM[Tyco Electronics]
Part No. MRF173CQ
OCR Text ... STYLE 2: PIN 1. 2. 3. 4. base COLLECTOR base EMITTER CASE 316-01 ISSUE D Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 116.10K  /  6 Page

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    MRF18030A MRF18030ALR3 MRF18030ALSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text ...LSR3 Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier...gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range...
Description SEE A3282EUA-T
CHOPPER STABILIZED LATCH W/TIN PLATING
SEE A3282ELHLT-T
RF Power Field Effect Transistors

File Size 504.66K  /  8 Page

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    MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3

MOTOROLA[Motorola, Inc]
Part No. MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text ...0ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and...gate-Source Voltage Total Device Dissipation @ TC 25C Derate above 25C Storage Temperature Range Op...
Description MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

File Size 399.98K  /  8 Page

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    MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text ...stors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier...gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range...
Description HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors

File Size 486.59K  /  8 Page

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    MRF18085B MRF18085BLSR3 MRF18085BR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text ... Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier am...gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range...
Description RF Power Field Effect Transistors

File Size 607.07K  /  12 Page

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For base gate Found Datasheets File :: 14866    Search Time::2.438ms    
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