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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
UT62L12816I
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| OCR Text |
...revised symbol name t hzb as t bhz f ?b revised symbol name t lzb as t blz g ?b revised symbol name t pwb as t bw 5. revised waveforms 6. revised i dr =50/5ua(max.) nov 6, 2001 rev. 1.0 1. revised dc electrical characterist... |
| Description |
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory 异步静态RAM高
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| File Size |
116.70K /
13 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KM616FR1000
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| OCR Text |
...able to high-z output t ohz , t bhz 0 25 0 25 0 35 0 40 0 60 ns output hold from address change t oh 10 - 15 - 15 - 15 - 30 - ns write write cycle time t wc 70 - 85 - 120 - 150 - 300 - ns chip select to end of write t cw 65 - 70 - 100 - 120... |
| Description |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM）的
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| File Size |
116.15K /
9 Page |
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it Online |
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Renesas Electronics Corporation.
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| Part No. |
R1LV0416CSB-7LI
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| OCR Text |
... lb#, ub# disable to high-z t bhz 0 20 0 25 ns 1, 2, 3 output disable to output in high-z t ohz 0 20 0 25 ns 1, 2, 3
r1lv0416c-i series rev.2.00, may.26.2004, page 9 of 16 write cycle r1lv0416c-i -5si -7li... |
| Description |
Wide Temperature Range Version 4M SRAM (256-kword 16-bit)
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| File Size |
113.46K /
18 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K6R1016C1D
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| OCR Text |
... lb disable to high-z output t bhz 0 5 0 6 ns output hold from address change t oh 3 - 3 - ns chip selection to power up time t pu 0 - 0 - ns chip selection to power downtime t pd - 10 - 12 ns write cycle* * the above parameters are also g... |
| Description |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). Data Sheet
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| File Size |
258.13K /
11 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K6R1016V1D
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| OCR Text |
...ba t oe t olz t lz(4,5) t ohz t bhz(3,4,5) t blz(4,5) t pu t pd 50% 50% v cc current i cc i sb timing waveform of write cycle(1) ( oe =clock) address cs ub , lb we data in data out t wc t cw(3) t bw t wp(2) t as(4) t dh t dw t ohz(6) hi... |
| Description |
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet
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| File Size |
256.96K /
11 Page |
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it Online |
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Renesas Electronics Corporation.
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| Part No. |
R1LV0416CBG-7LI R1LV0416CBG-5SI
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| OCR Text |
... lb#, ub# disable to high-z t bhz 0 20 0 25 ns 1, 2, 3 output disable to output in high-z t ohz 0 20 0 25 ns 1, 2, 3
r1lv0416cbg-i series rev.0.01, jan.11. 2005, page 7 of 14 write cycle r1lv0416cbg-i -5si -7li... |
| Description |
Wide Temperature Range Version 4M SRAM (256-kword 16-bit)
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| File Size |
138.82K /
16 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K6R1004V1D
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| OCR Text |
...ba t oe t olz t lz(4,5) t ohz t bhz(3,4,5) t blz(4,5) t pu t pd 50% 50% v cc current i cc i sb write cycle* * the above parameters are also guaranteed at industrial temperature range. parameter symbol k6r1004v1d-08 k6r1004v1d-10 unit min m... |
| Description |
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM(3.3V Operating) Row Select Data Sheet
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| File Size |
130.84K /
9 Page |
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it Online |
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Mosel Vitelic, Corp.
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| Part No. |
V62C1161024LL-120T
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| OCR Text |
...t in high-z t bhz - 25 - 30 - 35 - 40 ns 3,4,5 ble , bhe access time t ba - 40 - 40 - 50 - 60 ns read cycle (9) (v cc = 2v + 0... |
| Description |
Ultra Low Power 64K x 16 CMOS SRAM 超低功4K的16 CMOS SRAM
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| File Size |
78.55K /
10 Page |
View
it Online |
Download Datasheet |
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