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For calculating Found Datasheets File :: 3795 Search Time::0.781ms
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				MOTOROLA[Motorola, Inc]
Part No.	MTDF1N03HD ON2524 ON2523
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM From old datasheet system
File Size	222.29K / 12 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MTDF1P02HD ON2526 ON2525
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM From old datasheet system
File Size	228.90K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi Motorola Mobility Holdings, Inc.
Part No.	MTE53N50E MTE53N50E_D ON2535 ON2534
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	From old datasheet system TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	163.91K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTB90N02 NTB90N02T4 NTP90N02
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	Power MOSFET 90 Amps / 24 Volts TV 18C 14#22D 4#8(TWINAX) PIN 90 A, 24 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 90 Amps, 24 Volts Power MOSFET 90 Amps 24 Volts
File Size	75.62K / 9 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTD24N06 NTD24N06T4 NTD24N06T4G NTD2406-1 NTD24N06-001
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	Power MOSFET 24 Amps, 60 Volts N-Channel DPAK Power MOSFET 60 V, 24 A, N−Channel DPAK Power MOSFET 60 V, 24 A, N-Channel DPAK
File Size	122.73K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTD25P03 NTD25P03L NTD25P03L1 NTD25P03LG NTD25P03LT4
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	Power MOSFET 25 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET Power MOSFET 25 A, 30 V Logic Level P-Channel DPAK
File Size	74.34K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTD3055-094 NTD3055-094T4G NTD3055-094-1 NTD3055-094-1G NTD3055-094G NTD3055-094T4
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	Power MOSFET 12 A, 60 V Power MOSFET 12Amps, 60Volts N-Channel DPAK(12A, 60VN通道，DPAK封装的功率MOSFET) Power MOSFET 12Amps, 60Volts N-Channel DPAK(12A, 60V，N通道，DPAK封装的功率MOSFET) Power MOSFET 12 Amps, 60 Volts
File Size	76.64K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTD3055L104 NTD3055L104G NTD3055L104T4 NTD3055L104T4G NTD3055L104-1 NTD3055L104-1G
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	Power MOSFET
File Size	74.29K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MTY16N80E
OCR Text	...ce data is difficult to use for calculating rise and fall because drain ? gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av)...
Description	N-Channel Enhancement-Mode Silicon Gate
File Size	210.08K / 7 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MTY14N100E
OCR Text	...ce data is difficult to use for calculating rise and fall because drain ? gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av)...
Description	Power Field Effect N-Channel Enhancement-Mode Silicon Gate
File Size	206.43K / 7 Page	View it Online	Download Datasheet

For calculating Found Datasheets File :: 3795 Search Time::0.781ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |