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ON Semi
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| Part No. |
MJE13007 MJF13007 ON2709
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
POWER TRANSISTOR 8.0 AMPERES 400 VOLTS
From old datasheet system
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| File Size |
197.04K /
8 Page |
 View
it Online |
Download Datasheet
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ON Semi
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| Part No. |
MTU18N50E_D ON2666 ON2665
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
From old datasheet system
TMOS POWER FET 18 AMPERES 500 VOLTS
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| File Size |
157.41K /
8 Page |
View
it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MMSF4205_D ON2263
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
Medium Power Surface Mount Products
From old datasheet system
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| File Size |
192.07K /
12 Page |
View
it Online |
Download Datasheet |
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Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
MTB60N06HD_D MTB60N06HD MTB60N06 ON2444
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
TMOS POWER FET 60 AMPERES 60 VOLTS 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
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| File Size |
280.25K /
12 Page |
View
it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MMFT3055V_D ON2228
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
N-hannel Enhancement-ode Silicon Gate
From old datasheet system
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| File Size |
223.75K /
10 Page |
View
it Online |
Download Datasheet |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
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| Part No. |
MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
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| File Size |
157.34K /
8 Page |
View
it Online |
Download Datasheet |
| |
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ON Semi
|
| Part No. |
MTP50N06EL_D ON2615
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
TMOS POWER FET 50 AMPERES 60 VOLTS
From old datasheet system
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| File Size |
198.40K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
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ON Semi
|
| Part No. |
MTP6N60E_D ON2636
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
TMOS POWER FET 6.0 AMPERES 600 VOLTS
From old datasheet system
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| File Size |
157.23K /
8 Page |
View
it Online |
Download Datasheet |
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