| |
|
 |
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
KP024J P0120004P
|
| OCR Text |
...Our originally developed "pulse-doped" channel structure has realized low distortion, which leads to high IP3. The channel structure also achieved an extremely low noise figure. The details about pulse-doped FET channel are described in our... |
| Description |
1.5W GaAs Power FET (Pb-Free Type)
|
| File Size |
660.09K /
13 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
KP023J P0120003P
|
| OCR Text |
...Our originally developed "pulse-doped" channel structure has realized low distortion, which leads to high IP3. The channel structure also achieved an extremely low noise figure. The details about pulse-doped FET channel are described in our... |
| Description |
800mW GaAs Power FET (Pb-Free Type)
|
| File Size |
683.14K /
13 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
KP022J P0120002P
|
| OCR Text |
...Our originally developed "pulse-doped" channel structure has realized low distortion, which leads to high IP3. The channel structure also achieved an extremely low noise figure. The details about pulse-doped FET channel are described in our... |
| Description |
250mW GaAs Power FET (Pb-Free Type)
|
| File Size |
676.23K /
13 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|