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Samsung Electronic
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Part No. |
M464S6453CKS
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OCR Text |
... BA0 & 1 RAS CAS WE CKE0 & 1 10 dqn
SDRAM U0 ~ U7 SDRAM U0 ~ U7
SCL Serial PD WP SA0 SA1 SA2 SDA
SDRAM U0 ~ U7
47K
SDRAM U0 ~ U7 SDRAM U0 ~ U7 Every DQ pin of SDRAM * U0/U4 U1/U5 U2/U6 U3/U7
VDD Three 0.1 uF X7R 0603 Capacitor... |
Description |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
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File Size |
79.34K /
12 Page |
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Samsung Electronic
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Part No. |
M464S6453DKS
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OCR Text |
... SDRAM U0 ~ U7 SDRAM U0 ~ U7 10 dqn Every DQ pin of SDRAM * U0/U4 U1/U5 * U2/U6 U3/U7
SCL 47K Serial PD WP SA0 SA1 SA2 SDA
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ2... |
Description |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
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File Size |
139.66K /
11 Page |
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Samsung Electronic
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Part No. |
M464S6554MTS
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OCR Text |
... SDRAM U0 ~ U3 SDRAM U4 ~ U7 10 dqn VDD Three 0.1 uF X7R 0603 Capacitors per each SDRAM Vss To all SDRAMs Every DQ pin of SDRAM CS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
PC133/PC100 SODIMM
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Description |
64Mx64 SDRAM SODIMM based on 32Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
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File Size |
148.47K /
9 Page |
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http:// GSI Technology, Inc. Electronic Theatre Controls, Inc.
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Part No. |
GS8161Z32D-166 GS8161Z32D-166I GS8161Z32D-166T GS8161Z32D-133I GS8161Z32D-133IT GS8161Z32D-133T GS8161Z32D-225 GS8161Z32D-225I GS8161Z32D-225T GS8161Z32D-225IT GS8161Z32D-150I GS8161Z32D-250 GS8161Z32D-150T GS8161Z32D-150IT GS8161Z18D-200 GS8161Z32D-250I GS8161Z36T-166T GS8161Z32T-166 GS8161Z32T-225IT GS8161Z32T-166IT GS8161Z32T-166T GS8161Z18D-225 GS8161Z18D-225I GS8161Z18D-225IT GS8161Z18D-225T GS8161Z18T-150I GS8161Z18T-133T GS8161Z18D-166I GS8161Z18D-133I GS8161Z18T-133IT GS8161Z36T-166IT GS8161Z36D-250IT GS8161Z18T-166IT GS8161Z18D-133T GS8161Z32T-133T GS8161Z36T-150IT GS8161Z36T-133IT GS8161Z32T-133IT GS8161Z36D-225T GS8161Z36D-150T GS8161Z36D-250T GS8161Z36T-225I GS8161Z36T-225IT GS8161Z36T-225T GS8161Z18D-150T GS8161Z32D-250T GS8161Z18T-250 GS8161Z32D-250IT GS8161Z32T-225T GS8161Z18T-250I GS8161Z18T-250T GS8161Z18T-225T GS8161Z18T-250IT GS8161Z18D-133IT GS8161Z36D-133T GS8161Z36T-133T GS8161Z36D-166I GS8161Z18T-225IT GS8161Z32T-200IT GS8161Z36D-133IT GS8161Z32D-200IT GSITECHNOLOGY-GS8161Z32D-200IT GS8161Z36T-200 GS8161Z36T-150 GS8161Z36T-150I GS8161Z36T-133 GS8161Z36T-166 GS8161Z36T-133I GS8161Z36T-166I
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OCR Text |
...M Functional Block Diagram
DQa-dqn
FT
Q
Write Data
K
Register 1
D
Write Data
Write Address
Burst Counter
K
Register 2
SA1' SA0'
18
Read, Write and
Data Coherency
D
K
K
Control Logic
... |
Description |
512K X 36 ZBT SRAM, 6 ns, PBGA165 Dual Voltage Clamp 8-SM8 -40 to 85 35.7流水线和流量,通过同步唑的SRAM 10-Bit Voltage Clamp 24-SOIC -40 to 85 35.7流水线和流量,通过同步唑的SRAM 10-Bit Voltage Clamp 24-TVSOP -40 to 85 35.7流水线和流量,通过同步唑的SRAM 24-Bit to 48-Bit Registered Buffer with SSTL_2 Inputs and Outputs 114-BGA MICROSTAR 0 to 70 35.7流水线和流量,通过同步唑的SRAM RECTIFIER SCHOTTKY SINGLE 1A 20V 30A-Ifsm 0.5Vf 0.5A-IR SMA 5K/REEL 35.7流水线和流量,通过同步唑的SRAM 512K X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 35.7流水线和流量,通过同步唑的SRAM GIGABASE 350 CAT5E PATCH 4 FT, SNAGLESS, PURPLE 35.7流水线和流量,通过同步唑的SRAM 22-Bit Voltage Clamp 48-TVSOP -40 to 85 Dual Voltage Clamp 8-US8 -40 to 85 GIGABASE 350 CAT5E PATCH 25 FT, SNAGLESS, PURPLE 8192 x 18 Synchronous FIFO Memory 80-LQFP 0 to 70 1024 x 18 Synchronous FIFO Memory 64-TQFP 0 to 70 RECTIFIER SCHOTTKY SINGLE 1A 30V 25A-Ifsm 0.41Vf 1A-IR SMA 5K/REEL CAT5E PATCH CORD PURPLE 5FT Replaced by SN74TVC16222A : 22-Bit Voltage Clamp 48-TSSOP -40 to 85 2048 x 18 Synchronous FIFO Memory 64-TQFP 0 to 70 13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 64-TSSOP 0 to 70 ENHANCED PATCH CORD PURPLE 3 FT 13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 56-VQFN 0 to 70 14-Bit Registered Buffer With SSTL_2 Inputs and Outputs 48-TSSOP 0 to 70 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 96-LFBGA 0 to 70 Enhanced Product 26-Bit Registered Buffer With Sstl_2 Inputs And Lvcmos Outputs 96-LFBGA -40 to 85 10-Bit Voltage Clamp 24-TSSOP -40 to 85 4096 x 18 Synchronous FIFO Memory 64-TQFP 0 to 70 10-Bit Voltage Clamp 24-SSOP/QSOP -40 to 85 22-Bit Voltage Clamp 48-SSOP -40 to 85
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File Size |
600.26K /
36 Page |
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Samsung Electronic
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Part No. |
M366S0424ETS
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OCR Text |
... An, BA0 & 1 RAS CAS WE CKE0 10 dqn VDD Vss * * * *
SDRAM U0 ~ U3 SDRAM U0 ~ U3 SDRAM U0 ~ U3 SDRAM U0 ~ U3 SDRAM U0 ~ U3
SCL 47K
WP A0
SDA A1 A2
SA0 SA1 SA2
10 CLK0/2 15pF
* *
U0/U2 U1/U3
Every DQpin of SDRAM 10 ... |
Description |
4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
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File Size |
158.36K /
11 Page |
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it Online |
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Samsung Electronic
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Part No. |
M366S0424FTS
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OCR Text |
... An, BA0 & 1 RAS CAS WE CKE0 10 dqn VDD Vss * * * *
SDRAM U0 ~ U3 SDRAM U0 ~ U3 SDRAM U0 ~ U3 SDRAM U0 ~ U3 SDRAM U0 ~ U3
SCL 47K
WP A0
SDA A1 A2
SA0 SA1 SA2
10 CLK0/2 15pF
* *
U0/U2 U1/U3
Every DQpin of SDRAM 10 ... |
Description |
4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
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File Size |
157.33K /
11 Page |
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it Online |
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Samsung Electronic
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Part No. |
M366S0823DTS
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OCR Text |
... An, BA0 & 1 RAS CAS WE CKE0 10 dqn VDD Vss * * * * Two 0.1uF Capacitors per each SDRAM To all SDRAMs Every DQpin of SDRAM 10 CLK1/3 10pF 3.3pF SDRAM U0 ~ U7 SDRAM U0 ~ U7 SDRAM U0 ~ U7 SDRAM U0 ~ U7 SDRAM U0 ~ U7 10 CLK0/2 * * * SCL SDA A0... |
Description |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
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File Size |
152.41K /
10 Page |
View
it Online |
Download Datasheet
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Price and Availability
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