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R0100 2SB937Q VCX162 ON1750 BC373ZL1 1N5940B 00DIB S9717
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    RJH1CM5DPQ-E013

Renesas Electronics Corporation
Part No. RJH1CM5DPQ-E013
OCR Text ... ( ) (inductive load) eoff eon swithing energy losses e (mj) switching times t (ns) switching characteristics (typical) (3) switching characteristics (typical) (4) 110 100 0.1 10 1 100 swithing energy losses e (mj) 1 10 100 1 ...
Description 1200V - 15A - IGBT Application: Inverter

File Size 188.76K  /  10 Page

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    DG306AE25

DYNEX[Dynex Semiconductor]
N.A.
Part No. DG306AE25
OCR Text ...ymbol VTM IDM IRRM VGT IGT IRGM eon td tr EOFF tgs tgf tgq QGQ QGQT IGQM On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time Rise time...
Description Gate Turn-off Thyristor

File Size 216.65K  /  19 Page

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    IDC40D120T6M

Infineon Technologies AG
Part No. IDC40D120T6M
OCR Text eon technologies, aim pmd d cid t, l4672b, edition 0.9, 26.06.07 d iode emcon 4 medium power c hip this chip is used for: low / medium power modules features: 12 00v emcon 4 t echnology soft, fast switching ...
Description Diode EMCON 4 Medium Power Chip

File Size 111.96K  /  4 Page

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    IXGR60N60C3C1

IXYS Corporation
Part No. IXGR60N60C3C1
OCR Text ...Coes Cres Qg Qge Qgc td(on) tri eon td(off) tfi Eoff td(on) tri eon td(off) tfi Eoff RthJC RthCS Inductive Load, TJ = 125C IC = 40A, VGE = 15V VCE = 480V, RG = 3 Note 2 IC = 50A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC ...
Description GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

File Size 189.43K  /  6 Page

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    IRG4PH50UD IRG4PH50

IRF[International Rectifier]
Part No. IRG4PH50UD IRG4PH50
OCR Text ...Qg Qge Qgc td(on) tr td(off) tf eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise ...
Description 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)

File Size 226.41K  /  10 Page

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    IDC40D120T6H

Infineon Technologies AG
Part No. IDC40D120T6H
OCR Text eon tech nologies, aim pmd d cid t, l4672a, edition 0.9, 26.06.07 d iode emcon 4 high power c hip this chip is used for: medium / high power modules features: 12 00v emcon 4 t echnology soft, fast switching ...
Description Diode EMCON 4 High Power Chip

File Size 58.15K  /  4 Page

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    FGH75N60SF FGH75N60SFTU

Fairchild Semiconductor, Corp.
Part No. FGH75N60SF FGH75N60SFTU
OCR Text ...cteristics td(on) tr td(off) tf eon Eoff Ets td(on) tr td(off) tf eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise...
Description Discrete IGBT
IGBT, TO-247AB ROHS COMPLIANT PACKAGE-3
600V, 75A Field Stop IGBT

File Size 678.48K  /  8 Page

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    FGH75N60UF FGH75N60UFTU

Fairchild Semiconductor
Part No. FGH75N60UF FGH75N60UFTU
OCR Text ...cteristics td(on) tr td(off) tf eon Eoff Ets td(on) tr td(off) tf eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise...
Description 600V, 75A Field Stop IGBT

File Size 261.30K  /  8 Page

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    EN25B16-50FC EN25B16T-50FC EN25B16T-50FCP EN25B16T-50FI EN25B16T-50FIP EN25B16-50VC EN25B16T-50VC EN25B16T-50HC EN25B16T

Eon Silicon Solution Inc.
http://
Part No. EN25B16-50FC EN25B16T-50FC EN25B16T-50FCP EN25B16T-50FI EN25B16T-50FIP EN25B16-50VC EN25B16T-50VC EN25B16T-50HC EN25B16T-50HCP EN25B16T-50HI EN25B16T-50HIP EN25B16T-50VCP EN25B16T-50VI EN25B16T-50VIP EN25B16-50HC EN25B16-50HCP EN25B16-50HI EN25B16-50HIP EN25B16-100HC EN25B16-100HI EN25B16-100HIP EN25B16-100VC EN25B16-100VCP EN25B16-100VI EN25B16-100VIP EN25B16-50FCP EN25B16-50FI EN25B16-50FIP EN25B16-50VCP EN25B16-50VI EN25B16-50VIP EN25B16T-75FIP EN25B16T-75VC EN25B16T-75VI EN25B16T-100FIP EN25B16T-75HC EN25B16T-75FCP EN25B16T-100FC EN25B16T-100HC EN25B16T-100FCP EN25B16T-100HI EN25B16T-100HIP EN25B16T-75VCP EN25B16T-100HCP EN25B16T-75HI EN25B16T-75HIP EN25B16-75VC EN25B16T-100VC EN25B16T-100VI EN25B16T-100VCP
OCR Text ...ical specifications. (c)2004 eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2006/12/22 EN25B16 Figure.1 CONNECTION DIAGRAMS 8 - LEAD SOP 8 - CONTACT VDFN 16 - LEAD SOP This Data Sheet may be revised by...
Description 16 Mbit Serial Flash Memory with Boot and Parameter Sectors

File Size 464.59K  /  36 Page

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    ST Microelectronics
Part No. STGW33IH120D
OCR Text ... conditions min. typ. max. unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circuit in figure 2. if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as...
Description IGBT

File Size 548.07K  /  14 Page

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