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Kersemi Electronic Co., Ltd.
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| Part No. |
FQPF10N60C FQP10N60C
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| OCR Text |
....01 z ( jc (t), t herm al r esponse t 1 , s quare w ave p ulse d uration [sec] figure 11-1. transient thermal response curve for fqp10n60c figure 11-2. transient thermal response curve for fqpf10n60c t 1 p dm t 2 t 1 p dm t 2
fqp10n60... |
| Description |
600V N-Channel MOSFET
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| File Size |
1,016.70K /
9 Page |
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Kersemi Electronic Co., Ltd.
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| Part No. |
FQPF12N60C FQP12N60C
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| OCR Text |
....01 z ( jc (t), t herm al r esponse t 1 , square w ave pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 $ notes : 1. z ( jc (t) = 2.43 % /w m ax. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p ... |
| Description |
600V N-Channel MOSFET
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| File Size |
1,064.41K /
9 Page |
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it Online |
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Kersemi Electronic Co., Ltd.
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| Part No. |
IRFS730B TO-220
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| OCR Text |
....01 z % jc (t), t herm al r esponse t 1 , square w ave pulse duration [sec] figure 11. transient thermal response curve for irf730b t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ! notes : 1. z % jc (t) = 3.31... |
| Description |
400V N-Channel MOSFET
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| File Size |
3,092.11K /
9 Page |
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it Online |
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Emerson
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| Part No. |
SIL25C-12SNEG-VJ
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| OCR Text |
... design ? excellent transient r esponse ? output v oltage adjustability ? supports silicon voltage migration ? resulting in r educed design-in and qualification time ? designed in r eliability: mtbf of 3 million hours per t elcor dia sr-332... |
| Description |
DC-DC / Non-Isolated
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| File Size |
682.55K /
3 Page |
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it Online |
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Kersemi Electronic Co., Ltd.
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| Part No. |
IRFR310B
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| OCR Text |
...0.01 z ( jc (t), therm al r esponse t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 i d , drain current [a] t c , case temperature [ % ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 dc 10 ms 1 ms ... |
| Description |
400V N-Channel MOSFET
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| File Size |
670.87K /
9 Page |
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it Online |
Download Datasheet |
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Kersemi Electronic Co., Ltd.
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| Part No. |
IRFW630B
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| OCR Text |
...0.01 z ( jc (t), therm al r esponse t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ & ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operatio... |
| Description |
200V N-Channel MOSFET
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| File Size |
1,020.25K /
8 Page |
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it Online |
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