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  gate-pulsed Datasheet PDF File

For gate-pulsed Found Datasheets File :: 40607    Search Time::1.328ms    
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    HFP10N60S

SemiHow Co.,Ltd.
Part No. HFP10N60S
OCR Text ...nche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled G...Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt T...
Description 600V N-Channel MOSFET

File Size 838.62K  /  8 Page

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    HFP10N60

SemiHow Co.,Ltd.
Part No. HFP10N60
OCR Text ...anche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate...Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt T...
Description 600V N-Channel MOSFET

File Size 645.33K  /  8 Page

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    HFP10N65S

SemiHow Co.,Ltd.
Part No. HFP10N65S
OCR Text ...lanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Ch...Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt T...
Description 650V N-Channel MOSFET

File Size 428.73K  /  8 Page

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    AOTF7N60

Alpha & Omega Semiconductors
Part No. AOTF7N60
OCR Text ...DS Drain-Source Voltage 600 VGS Gate-Source Voltage 30 Continuous Drain Current Pulsed Drain Current C Units V V A A mJ mJ V/ns W W/ oC C C TC=25C TC=100C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL 7 4.4 28 3 135 270 5 176 1.4 -50...
Description 600V, 7A N-Channel MOSFET

File Size 151.06K  /  6 Page

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    L50NH3LL STL50NH3LL0609

STMicroelectronics
Part No. L50NH3LL STL50NH3LL0609
OCR Text gate charge STripFETTM Power MOSFET General features Type STL50NH3LL VDSS 30V RDS(on) <0.013 ID 13A (4) Improved die-to-...pulsed) Drain current (continuous) at TC = 25C Total dissipation at TC = 25C Total dissipation at TC...
Description N-channel 30V - 0.011ohm - 13A - PowerFLAT (6x5) Ultra low gate charge STripFET Power MOSFET

File Size 327.79K  /  12 Page

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    MRF6VP121KHSR6 MRF6VP121KHR6

Freescale Semiconductor, Inc
Part No. MRF6VP121KHSR6 MRF6VP121KHR6
OCR Text ...ll Operation * Greater Negative Gate-Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R6 Suffix = 15...Pulsed, 128 sec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 150 mA Case Temperature 62C, Mode-S Pulse...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 602.22K  /  20 Page

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    MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978-0075LF-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978-0075LF-15
OCR Text ...Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation (TC = 25C) Storage Temperature Junction Temperature Symbol V...pulsed), F=978MHz, Pulse=400us, Duty=1%. 1 ADVANCED: Data Sheets contain information regarding a...
Description LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty
   LDMOS Pulsed Power Transistor

File Size 161.03K  /  5 Page

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    RSU002N06

Rohm
Part No. RSU002N06
OCR Text ...DE 2 BODY DIODE (1) SOURCE (2) GATE (3) DRAIN Absolute maximum ratings (Ta = 25C) Symbol Parameter Limits 60 20 250 1 150 1 200 150 5...Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 *1 *2 Thermal resistance Parameter S...
Description 2.5V Drive Nch MOSFET

File Size 202.85K  /  6 Page

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    SP000216320 SPA11N80C3 SPP11N80C305 Q67040-S4438 11N80C3

Infineon Technologies AG
Part No. SP000216320 SPA11N80C3 SPP11N80C305 Q67040-S4438 11N80C3
OCR Text gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-31 1...Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.2A, VDD=50V 33 470...
Description Cool MOS⑩ Power Transistor
Cool MOS?/a> Power Transistor
Cool MOS Power Transistor
Cool MOS垄芒 Power Transistor

File Size 674.97K  /  13 Page

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    SP000216302 SPP06N80C3 SPP06N80C307 SPA06N80C3

Infineon Technologies AG
Infineon Technologies A...
Part No. SP000216302 SPP06N80C3 SPP06N80C307 SPA06N80C3
OCR Text gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-31 1...Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=1.2A, VDD=50V 18 230...
Description Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS垄芒 Power Transistor
   Cool MOS?Power Transistor

File Size 674.18K  /  13 Page

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For gate-pulsed Found Datasheets File :: 40607    Search Time::1.328ms    
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