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ge-avalanche Datasheet PDF File

For ge-avalanche Found Datasheets File :: 2078 Search Time::3.015ms
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				IRF[International Rectifier]
Part No.	IRG4PC50S IRG4PC50SPBF
OCR Text	... o C V = 15V 20s PULSE WIDTH GE 1 10 TJ = 25 oC V = 50V 5s PULSE WIDTH CC 5 6 7 8 9 10 1 0.1 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. ...
Description	600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) INSULATED GATE BIPOLAR TRANSISTOR
File Size	161.26K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PC50W IRG4PC50WPBF
OCR Text	... 1 V = 15V 20s PULSE WIDTH GE 10 1 5 6 7 8 V = 50V 5s PULSE WIDTH CC 9 10 11 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer...
Description	600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
File Size	154.00K / 8 Page	View it Online	Download Datasheet

				Infineon
Part No.	SGP10N60
OCR Text	... CE V CGR 600 V 600 V GE IC Gate-emitter voltage DC collector current TC = 25 C TC = 100 C 20 A 25 10 Pulsed collector ...Avalanche energy, single pulse IC = 10 A, V CC = 50 V, RGE = 25 L = 350 H, Tj = 25 C mJ 18 ...
Description	IGBT From old datasheet system
File Size	81.70K / 5 Page	View it Online	Download Datasheet

				Infineon
Part No.	SGP30N60
OCR Text	... CE V CGR 600 V 600 V GE IC Gate-emitter voltage DC collector current TC = 25 C TC = 100 C 20 A 58 30 Pulsed collector ...Avalanche energy, single pulse IC = 30 A, V CC = 50 V, RGE = 25 L = 100 H, Tj = 25 C mJ 65 ...
Description	IGBT From old datasheet system
File Size	61.87K / 5 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FRS9140H FRS9140R FRS9140D FN3264
OCR Text	...n 5/19/90 on TA17741 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron deriva...
Description	11 A, 100 V, 0.315 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA From old datasheet system 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs 11A/ -100V/ 0.315 Ohm/ Rad Hard/ P-Channel Power MOSFETs
File Size	47.82K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA200SA60S
OCR Text	....5 V = 15V 20s PULSE WIDTH GE 1.0 1.5 2.0 2.5 10 5 6 V = 50V 5s PULSE WIDTH CC 7 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Tran...
Description	600V DC-1 kHz (Standard) Single IGBT in a SOT-227 package INSULATED GATE BIPOLAR TRANSISTOR
File Size	198.14K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PSC71K
OCR Text	...ng Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 10.0 I C = 60A 8.0 100 RG = 5.0Ohm VGE = 15V VCC = 480V IC = 120 A 10 IC = 60 A IC = 30 A 1 6.0 4.0 2.0 0.0 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 ...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.83V, @Vge=15V, Ic=60A)
File Size	143.69K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PSC71U
OCR Text	... 25 C 10 10 1 1.0 V GE = 15V 80s PULSE WIDTH 1.5 2.0 2.5 3.0 3.5 1 5 6 7 V CC = 50V 5s PULSE WIDTH 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characte...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)
File Size	142.75K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLI3803 2315
OCR Text	... G S , G ate-to -S ource V olta ge (V ) T J , Junction T emperature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRLI3803 1...Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package HEXFET? Power MOSFET From old datasheet system
File Size	99.90K / 8 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	FRM9240H FRM9240R FRM9240D FN3242
OCR Text	... 7/13/90 on TA 17742 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron deriva...
Description	7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs 7 A, 200 V, 0.72 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA From old datasheet system
File Size	46.78K / 6 Page	View it Online	Download Datasheet

For ge-avalanche Found Datasheets File :: 2078 Search Time::3.015ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |