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  hdtmos Datasheet PDF File

For hdtmos Found Datasheets File :: 188    Search Time::1.203ms    
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    MGSF3442XT1 MGSF3442XT1_D ON1904 ON1903

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MGSF3442XT1 MGSF3442XT1_D ON1904 ON1903
OCR Text ...e Motorola's High Cell Density, hdtmos process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc-dc converters, power management i...
Description N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
From old datasheet system

File Size 82.92K  /  4 Page

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    MGSF3442VT1 MGSF3442VT1_D ON1902 ON1901

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MGSF3442VT1 MGSF3442VT1_D ON1902 ON1901
OCR Text ...e Motorola's High Cell Density, hdtmos process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc-dc converters, power management i...
Description N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
From old datasheet system

File Size 138.26K  /  6 Page

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    MMDF2P02HD ON2170

MOTOROLA[Motorola, Inc]
Part No. MMDF2P02HD ON2170
OCR Text ...ze Motorola's High Cell Density hdtmos process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the dr...
Description From old datasheet system
DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

File Size 256.92K  /  10 Page

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    MMDF2P01HD ON2166 MMDF2P01HDR2

MOTOROLA INC
Motorola, Inc
Part No. MMDF2P01HD ON2166 MMDF2P01HDR2
OCR Text ...ze Motorola's High Cell Density hdtmos process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the dr...
Description 2 A, 12 V, 0.2 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
From old datasheet system

File Size 283.97K  /  10 Page

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    MTSF3N03HD ON2664 ON2663

MOTOROLA[Motorola, Inc]
Part No. MTSF3N03HD ON2664 ON2663
OCR Text ...ze Motorola's High Cell Density hdtmos process to achieve lowest possible on-resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low rever...
Description SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM
From old datasheet system

File Size 228.84K  /  12 Page

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    MTSF3N02HD ON2662 ON2661

MOTOROLA[Motorola, Inc]
Part No. MTSF3N02HD ON2662 ON2661
OCR Text ...ze Motorola's High Cell Density hdtmos process to achieve lowest possible on-resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low rever...
Description SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM
From old datasheet system

File Size 231.47K  /  12 Page

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    MGSF1P02LT1 MGSF1P02LT3

MOTOROLA[Motorola, Inc]
Part No. MGSF1P02LT1 MGSF1P02LT3
OCR Text ...e Motorola's High Cell Density, hdtmos process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc-dc converters and power...
Description P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

File Size 195.68K  /  6 Page

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    MTDF1P02HD ON2526 ON2525

Motorola, Inc
Part No. MTDF1P02HD ON2526 ON2525
OCR Text ...ze Motorola's High Cell Density hdtmos process to achieve lowest possible on-resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low rever...
Description DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM
From old datasheet system

File Size 228.90K  /  12 Page

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    MTDF1N03HD ON2524 ON2523

MOTOROLA[Motorola, Inc]
Part No. MTDF1N03HD ON2524 ON2523
OCR Text ...ze Motorola's High Cell Density hdtmos process to achieve lowest possible on-resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low rever...
Description DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM
From old datasheet system

File Size 222.29K  /  12 Page

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For hdtmos Found Datasheets File :: 188    Search Time::1.203ms    
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