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    K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC20 K7P403622B K7P403622B-HC16 K7P403622B-HC25 K7P401822B-HC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC20 K7P403622B K7P403622B-HC16 K7P403622B-HC25 K7P401822B-HC160 K7P403622B-HC200 K7P401822B-HC20T
OCR Text ...nary Preliminary Rev. 0.2 jan. 2003 Preliminary Rev. 1.0 Rev. 1.1 Rev. 1.2 Jun. 2003 Jul. 2003 Jul. 2003 Final Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics C...
Description SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM

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    K7P401822M-H16 K7P401822M-H19 K7P401822M-H20 K7P403622M K7P403622M-H16 K7P403622M-H19 K7P403622M-H20 K7P401822B-HC16 K7P

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K7P401822M-H16 K7P401822M-H19 K7P401822M-H20 K7P403622M K7P403622M-H16 K7P403622M-H19 K7P403622M-H20 K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC16 K7P403622B-HC20 K7P403622B-HC25
OCR Text ...7 Preliminary Rev. 0.2 jan. 1998 Preliminary Rev. 1.0 Dec. 1998 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifica...
Description 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM

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    MASWSS0020 MASWSS0020SMB MASWSS0020TR

MA-Com
MACOM[Tyco Electronics]
Part No. MASWSS0020 MASWSS0020SMB MASWSS0020TR
OCR Text jan 16 2002 MASWSS0020 Features * * * * * * Low Voltage Operation 2.5V Low Harmonics > 65 dBc at +34 dBm & 1 GHz Low Insertion Loss 0.6 dB at 1 GHz High Isolation 23 dB at 2 GHz Miniature FQFP 16-lead 4x4mm Package 0.5 micron GaAs p...
Description DC-3 GHz, GaAs SP4T 2.5V high power switch
GaAs SP4T 2.5V High Power Switch DC - 3 GHz
ER 9C 6#16 3#12 SKT RECP
ER 9C 6#16 3#12 PIN RECP 砷化镓SP4T 2.5V的大功率开关直 3千兆

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    MX26C4000B MX26C4000BMC-10 MX26C4000BMC-12 MX26C4000BMC-15 MX26C4000BMC-90 MX26C4000BMI-10 MX26C4000BMI-12 MX26C4000BMI-

MCNIX[Macronix International]
Part No. MX26C4000B MX26C4000BMC-10 MX26C4000BMC-12 MX26C4000BMC-15 MX26C4000BMC-90 MX26C4000BMI-10 MX26C4000BMI-12 MX26C4000BMI-15 MX26C4000BMI-90 MX26C4000BPC-10 MX26C4000BPC-12 MX26C4000BPC-15 MX26C4000BPC-90 MX26C4000BPI-10 MX26C4000BPI-12 MX26C4000BPI-15 MX26C4000BPI-90 MX26C4000BQC-10 MX26C4000BQC-12 MX26C4000BQC-15 MX26C4000BQC-90 MX26C4000BQI-10 MX26C4000BQI-12 MX26C4000BQI-15 MX26C4000BQI-90 MX26C4000BTC-10 MX26C4000BTC-12 MX26C4000BTC-15 MX26C4000BTC-90 MX26C4000BTI-10 MX26C4000BTI-15 MX26C4000BTI-12
OCR Text ... GND 1 Q6 REV. 0.6, jan. 14, 2002 MX26C4000B BLOCK DIAGRAM WRITE CONTROL CE OE INPUT LOGIC HIGH VOLTAGE PROGRAM/ERASE STATE MACHINE (WSM) X-DECODER MX26C4000B FLASH ARRAY ARRAY STATE REGISTER ADDRESS LATCH A0-...
Description 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM

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    P82B715 P82B715PN P82B715TD 82B715

http://
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. P82B715 P82B715PN P82B715TD 82B715
OCR Text jan 09 Philips Semiconductors Philips Semiconductors Preliminary specification I2C bus extender 82B715 DESCRIPTION The 82B715 is a bipolar integrated circuit intended for application in I2C bus systems. While retaining al...
Description I2C bus extender

File Size 95.76K  /  10 Page

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    PDSP16510AMA PDSP16510AMAAC1R PDSP16510AMAGCPR

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. PDSP16510AMA PDSP16510AMAAC1R PDSP16510AMAGCPR
OCR Text ...rface mount package MAR 1993 jan 1997 OCT 1998 NOTE Polyimide is used as an inter-layer dielectric and as glassivation. Polymeric material is also used for die attach which according to the requirement in paragraph 1.2.1.b. (2) preclu...
Description Stand Alone FFT Processor

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    TDA8714 TDA8714M TDA8714M_6 TDA8714T TDA8714T_7 TDA8714T_6

PHILIPS[Philips Semiconductors]
Part No. TDA8714 TDA8714M TDA8714M_6 TDA8714T TDA8714T_7 TDA8714T_6
OCR Text ...ication Supersedes data of 1996 jan 31 File under Integrated Circuits, IC02 1997 Oct 29 Philips Semiconductors Product specification 8-bit high-speed analog-to-digital converter FEATURES * 8-bit resolution * Sampling rate up to 80...
Description 8-bit high-speed analog-to-digital converter

File Size 154.25K  /  24 Page

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    TEA1102 TEA1102T TEA1102TS

PHILIPS[Philips Semiconductors]
Part No. TEA1102 TEA1102T TEA1102TS
OCR Text ... Integrated Circuits, IC03 1999 jan 27 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd, NiMH, SLA and LiIon FEATURES * Safe and fast charging of Nickel Cadmium (NiCd), Nickel Metal Hydride (NiMH), Lithium...
Description Fast charge ICs for NiCd, NiMH, SLA and LiIon

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    TEA1103 TEA1103T TEA1103TS

PHILIPS[Philips Semiconductors]
Part No. TEA1103 TEA1103T TEA1103TS
OCR Text ... Integrated Circuits, IC03 1999 jan 27 Philips Semiconductors Preliminary specification Fast charge ICs for NiCd and NiMH batteries FEATURES * Safe and fast charging of Nickel Cadmium (NiCd) and Nickel Metal Hydride (NiMH) batteri...
Description Fast charge ICs for NiCd and NiMH batteries

File Size 302.30K  /  28 Page

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    TEA1207T

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. TEA1207T
OCR Text ...ication Supersedes data of 1999 jan 14 File under Integrated Circuits, IC03 1999 Oct 21 Philips Semiconductors Preliminary specification High efficiency DC/DC converter FEATURES * Fully integrated DC/DC converter circuit * Up-or-d...
Description High efficiency DC/DC converter

File Size 77.48K  /  16 Page

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