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For l-if Found Datasheets File :: 117657    Search Time::2.344ms    
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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H1G0838M-TC_LB3 K4H1G0438M K4H1G0438M-TC_LA2 K4H1G0438M-TC_LB0 K4H1G0438M-TC_LB3 K4H1G0838M-TC_LA2 K4H1G0838M-TC_LB0 K4H1G0438M-TC/LB0 K4H1G0838M-TC/LB0 K4H1G0438M-TC/LA2 K4H1G0438M-TC/LB3 K4H1G0838M-TC/LA2 K4H1G0838M-TC/LB3
OCR Text ...al data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) * Four banks operation * Differential clock inputs(CK and CK) * DLL aligns DQ and DQS transit...If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also prov...
Description 1Gb M-die DDR SDRAM Specification

File Size 203.73K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H1G0838M-ULB3 K4H1G0438M-LA2 K4H1G0438M-LB0 K4H1G0438M-LB3 K4H1G0438M-UC K4H1G0438M-UC_LA2 K4H1G0438M-UC_LB0 K4H1G0438M-UC_LB3 K4H1G0438M-UC0 K4H1G0438M-UC2 K4H1G0438M-UC3 K4H1G0438M-UCA2 K4H1G0438M-UCB0 K4H1G0438M-UCB3 K4H1G0438M-ULA2 K4H1G0438M-ULB0 K4H1G0438M-ULB3 K4H1G0838M-LA2 K4H1G0838M-LB0 K4H1G0838M-LB3 K4H1G0838M-UC_LA2 K4H1G0838M-UC_LB0 K4H1G0838M-UC_LB3 K4H1G0838M-UC0 K4H1G0838M-UC2 K4H1G0838M-UC3 K4H1G0838M-UCA2 K4H1G0838M-UCB0 K4H1G0838M-UCB3 K4H1G0838M-ULA2 K4H1G0838M-ULB0
OCR Text ...al data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) * Four banks operation * Differential clock inputs(CK and CK) * DLL aligns DQ and DQS transit...If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also prov...
Description 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

File Size 203.93K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H280838F-TC_LB3 K4H280438F K4H280438F-TC_LA0 K4H280438F-TC_LA2 K4H280438F-TC_LB0 K4H280838F-TC_LA2 K4H280838F-TC_LB0
OCR Text ... Banks) DDR SDRAM 4/8 (L)WE (L)DM I/O Control CK, CK Data Input Register Serial to parallel Bank Select 8/16 4Mx8/ ...If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also prov...
Description 128Mb F-die DDR SDRAM Specification

File Size 203.97K  /  23 Page

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    IC-NQC11

IC-Haus GmbH
Part No. IC-NQC11
OCR Text ...s http://www.ichaus.com p r e l i m i n a r y p r e l i m i n a r y ic-nqc 13-bit sin/d converter with signal calibration rev d1...if enabled by pzero and nzero. the front-end ampli?ers are con?gured as instrumen- tation ampli?ers,...
Description 13-bit Sin/D CONVERTER WITH SIGNAL CALIBRATION

File Size 1,069.02K  /  29 Page

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    B82476B1224M100 B82476B1104M100 B82476B1153M100 B82476B1154M100 B82476B1222M100 B82476B1332M100 B82476B1334M100 B82476B1

EPCOS
Part No. B82476B1224M100 B82476B1104M100 B82476B1153M100 B82476B1154M100 B82476B1222M100 B82476B1332M100 B82476B1334M100 B82476B1473M100 B82476B1152M100 B82476B1223M100 B82476B1105M100 B82476B1333M100 B82476B1474M100
OCR Text ...ng on component: manufacturer, l value (in h), date code minimum data on reel: manufacturer, part number, ordering code, l value and tol...if the components are to be washed varnished it is necessary to check whether the washing varnis...
Description Ferrite core, Winding: enamel copper wire, Winding soldered to terminals

File Size 728.37K  /  7 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H280838F-ULB3 K4H280438F-UC K4H280438F-UCA0 K4H280438F-UCA2 K4H280438F-UCB0 K4H280438F-ULA0 K4H280438F-ULA2 K4H280438F-ULB0 K4H280838F-UCA2 K4H280838F-UCB0 K4H280838F-UCB3 K4H280838F-ULA2 K4H280838F-ULB0
OCR Text ... Banks) DDR SDRAM 4/8 (L)WE (L)DM I/O Control CK, CK Data Input Register Serial to parallel Bank Select 8/16 4Mx8/ ...If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also prov...
Description 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

File Size 295.20K  /  23 Page

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    2SJ624-T1B-A

Renesas Electronics Corporation
Part No. 2SJ624-T1B-A
OCR Text ...the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology m...if you have any questi ons regarding the informat ion contained in this document or renesas electro...
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 197.51K  /  10 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_LAA K4H510638E-TC_LB0 K4H510738E K4H510738E-TC_LA2 K4H510738E-TC_LAA
OCR Text ... Refresh Exit CKEn-1 CKEn H H H L H H H H Bank Selection All Banks Entry Exit Entry Precharge Power Down Mode Exit DM(UDM/LDM for x16 only) ...If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If BA0 i...
Description Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)

File Size 188.40K  /  22 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
OCR Text ...BA1 BA0 A8 A7 K A0 A10/AP A6 A5 L A2 A1 A4 VSS M VDD A3 32M x 8bit 1 2 3 7 8 9 VSSQ DQ7 VSS A VDD DQ0 VDDQ NC VDDQ DQ6 B DQ1 VSSQ NC NC ...If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also prov...
Description DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)

File Size 195.42K  /  18 Page

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For l-if Found Datasheets File :: 117657    Search Time::2.344ms    
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