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ONSEMI[ON Semiconductor]
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Part No. |
NTQS6463R2 NTQS6463
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OCR Text |
...t. The voltage is determined by ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate res... |
Description |
Power MOSFET 6.2 Amps, 20 Volts
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File Size |
66.70K /
6 Page |
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it Online |
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
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Part No. |
MTP6P20E_D MTP6P20E ON2638
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OCR Text |
...t. The voltage is determined by ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate res... |
Description |
From old datasheet system TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 1.0 OHM
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File Size |
215.85K /
8 Page |
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it Online |
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ON Semi
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Part No. |
MTP6P20E_D ON2637
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OCR Text |
...t. The voltage is determined by ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate res... |
Description |
TMOS POWER FET 6.0 AMPERES 200 VOLTS From old datasheet system
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File Size |
184.59K /
8 Page |
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it Online |
Download Datasheet
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MOTOROLA INC Motorola, Inc. ON Semi
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Part No. |
MMFT3055VL MMFT3055VL_D ON2227 MMFT3055VLT3
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OCR Text |
...t. The voltage is determined by ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate res... |
Description |
1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA TMOS POWER FET 1.5 AMPERES 60 VOLT N-hannel Enhancement-ode Silicon Gate From old datasheet system
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File Size |
223.69K /
10 Page |
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it Online |
Download Datasheet
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Price and Availability
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