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  na-100 Datasheet PDF File

For na-100 Found Datasheets File :: 87104    Search Time::2.109ms    
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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ...Off Delay Time Fall Time mA nA pF ID = 22A 30 2.4 12 59 12 30.7 21 145 64 105 22 88 nC nC VDS = 0.5BVDSS VDD = 50V ID = 22A RG = 9.1W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source...
Description N-CHANNEL POWER MOSFET

File Size 22.30K  /  2 Page

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ...Off Delay Time Fall Time mA nA pF ID = 27A 50 8 15 125 22 65 35 190 170 130 27 108 nC nC VDS = 0.5BVDSS VDD = 50V ID = 27A RG = 2.35W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ...0V, TJ = 150C --- 200 VGS = 20V nA --- -200 VGS = -20V 210 320 ID = 85A 45 68 nC VDS = 60V 73 110 VGS = 10V 22 --- VDD = 38V 130 --- ID = 85...100 I D , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) 100 4.5V 10 ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...S = 0V, TJ = 175C 200 VGS = 20V nA -200 VGS = -20V 260 ID = 100A 63 nC VDS = 32V 59 VGS = 10V, See Fig. 6 and 13 --- VDD = 20V --- ID = 100...100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ...GS = 0V, TJ = 70C 100 VGS = 12V nA -100 VGS = -12V 7.5 ID = 4.2A --- nC VDS = 10V --- VGS = 4.5V --- VDD = 10V --- ID = 1.0A ns --- RG = 53 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characterist...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ...S = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 200 ID = 130A 52 nC VDS = 32V 59 VGS = 10V --- VDD = 20V --- ID = 130A ns --- RG = 2.5 --...100 ns TJ = 25C, IF = 130A --- 120 180 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...) 8.1 6.5 - 100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 4.1A, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) VGS = 10V, ID = 8.1A, VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ...Off Delay Time Fall Time mA nA pF ID = 13.9A 32 2.2 14.2 60 10.6 37.6 20 152 58 67 13.9 56 nC nC VDS = 0.5BVDSS VDD = 100V ID = 13.9A RG = 9.1W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pu...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...ON)MAX, VGS = 10V 14 13 100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 8A, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 10V, ID = 14A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Cha...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text ...Off Delay Time Fall Time mA nA pF ID = 22A 55 8 30 115 22 60 35 190 170 130 22 88 nC nC VDS = 0.5BVDSS VDD = 100V ID = 22A RG = 2.35W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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