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  power mos 7 fredfet 3 5 a 1200 Datasheet PDF File

For power mos 7 fredfet 3 5 a 1200 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    APT20F50B APT20F50S

Microsemi Corporation
MICROSEMI power PRODUCTS GROUP
Part No. aPT20F50B aPT20F50S
Description N-Channel fredfet
20 a, 500 V, 0.3 ohm, N-CHaNNEL, Si, power, mosFET, TO-247

File Size 248.41K  /  4 Page

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    1214-370V

STMicroelectronics N.V.
Microsemi Corporation
Part No. 1214-370V
Description L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (&amp;#181;sec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF power TRaNSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz

File Size 225.51K  /  5 Page

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    Microsemi, Corp.
Part No. aPT20GF120KRG
Description Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (a): 20; 32 a, 1200 V, N-CHaNNEL IGBT, TO-220aB

File Size 71.40K  /  5 Page

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    advanced power Technology, Ltd.
Part No. aPT25GT120BRG
Description Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (a): 25; 54 a, 1200 V, N-CHaNNEL IGBT, TO-247aa

File Size 129.34K  /  6 Page

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    SIEMENS aG
SIEMENS[Siemens Semiconductor Group]
Part No. C67076-a1050-a2 BSM151F
Description SIMOPaC Module (power module Single switch fredfet N channel Enhancement mode)
From old datasheet system

File Size 225.67K  /  7 Page

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    BSM181F C67076-A1052-A2

SIEMENS aG
SIEMENS[Siemens Semiconductor Group]
Part No. BSM181F C67076-a1052-a2
Description SIMOPaC Module (power module Single switch fredfet N channel Enhancement mode)
From old datasheet system

File Size 225.48K  /  7 Page

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    Microsemi, Corp.
Part No. aPT1201R2SLL aPT1201R2BLL
Description 12 a, 1200 V, 1.2 ohm, N-CHaNNEL, Si, power, mosFET D3PaK-3
12 a, 1200 V, 1.2 ohm, N-CHaNNEL, Si, power, mosFET, TO-247 TO-247, 3 PIN

File Size 61.92K  /  4 Page

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    Microsemi, Corp.
advanced power Technology Ltd.
aDPOW[advanced power Technology]
Part No. 1214-300M
Description L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (&amp;#181;sec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BaND, Si, NPN, RF power TRaNSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz

File Size 117.23K  /  4 Page

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    APT20M22LVFR APT20M22LVFRG

Microsemi, Corp.
advanced power Technology
Part No. aPT20M22LVFR aPT20M22LVFRG
Description power fredfet; Package: TO-264 [L]; ID (a): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 a, 200 V, 0.022 ohm, N-CHaNNEL, Si, power, mosFET, TO-264aa
power mos V is a new generation of high voltage N-Channel enhancement mode power mosFETs.
power mos V 200V 100a 0.022 Ohm

File Size 66.13K  /  4 Page

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    Microsemi, Corp.
Part No. aPT50GT120B2RDQ2G
Description Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MaX&amp;#153; [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (a): 50; 94 a, 1200 V, N-CHaNNEL IGBT, TO-247

File Size 224.58K  /  9 Page

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For power mos 7 fredfet 3 5 a 1200 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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