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Fairchild Semiconductor, Corp.
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Part No. |
FQT4N25
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OCR Text |
... 5)
VDD = 125 V, ID = 3.6 A, RG = 25
(Note 4, 5)
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6.8 45 6.4 22 4.3 1.3 2.1
25 100 25 55 5.6 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous ... |
Description |
250V N-Channel MOSFET 0.83 A, 250 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
652.28K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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Part No. |
HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
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OCR Text |
... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10.
Electrical Specifications
PARAMETER
TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...6.3 250 110 145 32 28 210 98 320 550 700 uNITS V V A mA V V V nA A A V nC nC ns ns ns ns J J J
Co... |
Description |
45 A, 600 V, uFS N-Channel IGBT Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB 45A, 600V, uFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT
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File Size |
141.01K /
8 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
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OCR Text |
...E = 20A, VCE = 390V, VGE = 15V, RG = 3, L = 500H, Test Circuit Figure 24 TYP 1.8 1.6 5.5 8.6 142 182 15 12 73 32 105 280 150 15 13 105 55 115 510 330 MAX 250 3.0 2.7 2.0 7.0 250 162 210 350 200 21 18 135 73 600 500 uNITS V A mA V V V nA A V... |
Description |
CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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File Size |
162.96K /
9 Page |
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it Online |
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Price and Availability
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