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Guangdong Kexin Industr...
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| Part No. |
AO3402
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| OCR Text |
...e vs. junction temperature n o rm ali ze d o n - r es i sta n c e v gs =2.5v v gs =10v v gs =4.5v 0 50 100 150 200 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r d s(o n ) ( m ? ) 25c 125c v ds =5v v gs =2... |
| Description |
N-Channel enhancement mode field effect transistor
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| File Size |
903.35K /
4 Page |
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Shenzhen Winsemi Microe...
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| Part No. |
WDW60DK30B
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| OCR Text |
...tions value units min typ max i rm reverse leakage current v r =300v - - 20 a v r =300v,t j =125 - - 250 a v f forward voltage drop i f = 30 a - 1.1 1.3 v i f = 3 0a ,tj=125 - 1.0 - v t rr reverse recovery time i f = 1 a ,v r =30,di/dt=... |
| Description |
Ultrafast Dual Diode
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| File Size |
377.55K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF15B65M2
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| OCR Text |
...rr - 298 - ns q rr - 0.7 - c i rm - 5.4 - a t d(on) - 14 - ns t r - 20 - ns t d(off) - 111 - ns t f - 24 - ns e on - 0.32 - mj e off - 0.34 - mj e total - 0.66 - mj t rr - 422 - ns q rr - 1.3 - c i rm - 6.8 - a this product has been desig... |
| Description |
iGBT with Anti-Parallel Diode iGBTs
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| File Size |
572.05K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
ESDA14V2-1BF3
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| OCR Text |
...hort-circuit symbol parameter v rm stand-off voltage v br breakdown voltage v cl clamping voltage i rm leakage current @ v rm r d dynamic resistance t voltage - temperature coefficient c line line capacitance table 2. electrical characteri... |
| Description |
TVS Clamping Array
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| File Size |
226.34K /
9 Page |
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it Online |
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