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				NXP Semiconductors
Part No.	PHD78NQ03LT
OCR Text	... Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain 2 1 3 Simplified outline [1] mb ...FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source vo...
Description	N-channel TrenchMOS logic level FET
File Size	187.57K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PHP78NQ03LT
OCR Text	... Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain mb D Simplified outline Graphic ...FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source vo...
Description	N-channel TrenchMOS logic level FET
File Size	179.97K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	PHD38N02LT
OCR Text	...tion gate (G) drain (D) source (S) mounting base; connected to drain (D) mbb076 Simplified outline [1] Symbol D mb G S 2 1...FET 3. Ordering information Table 2. Ordering information Package Name PHD38N02LT DPAK Descripti...
Description	N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
File Size	77.50K / 12 Page	View it Online	Download Datasheet

				M/A-COM Technology Solu... M/A-COM Technology Solutions, Inc.
Part No.	MRF160 MRF160-15
OCR Text	...teed. changes to the product(s) or information contained herein without notice. MRF160 The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V M/A-COM Products Released - Rev. 07.07 2 ADVANCED: Data Sheets contain informatio...
Description	The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
File Size	526.31K / 11 Page	View it Online	Download Datasheet

				Maxim Integrated Products
Part No.	MAX447308
OCR Text	... 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com. Low-Cost, Low-Voltage, PA Power Control Amplifier for GSM Applications MAX...FET, Q1. Connect to supply side of current-sense resistor, RSENSE, through gain resistor RG1. Noninv...
Description	Low-Cost, Low-Voltage, PA Power Control Amplifier for GSM Applications
File Size	195.73K / 9 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG4501
OCR Text	SSG4501 Elektronische Bauelemente N Channel 7A, 30V,RDS(ON) 28m[ P Channel -5.3A, -30V,RDS(ON) 50m [ Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4501 provide the designer...
Description	Enhancement Mode Power Mos.FET
File Size	836.45K / 9 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG4503A
OCR Text	...MHz VDS=10V, ID=8A _ _ S Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. _ _ _ Typ. _ ...FET o N Channel 8.3A, 30V,RDS(ON) 20m[ P Channel -7.1A, -30V,RDS(ON) 28m[ SSG4503A Electri...
Description	Enhancement Mode Power Mos.FET
File Size	1,183.98K / 7 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG4503
OCR Text	...Hz VDS=10V, ID=6 A _ _ S Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. _ _ _ Typ. _ ...FET o N Channel 6.9A, 30V,RDS(ON) 28m[ P Channel -6.3A, -30V,RDS(ON) 36m[ SSG4503 Electric...
Description	Enhancement Mode Power Mos.FET
File Size	1,130.93K / 7 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG4505
OCR Text	SSG4505 Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m[ P Channel -8.4A, -30V,RDS(ON) 20m[ Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4505 provide the designer...
Description	Enhancement Mode Power Mos.FET
File Size	977.96K / 7 Page	View it Online	Download Datasheet

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