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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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Part No. |
K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N K4M281633F-RE
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OCR Text |
...all bi-directional buffers with tri-state outputs. 4. Dout is disabled, 0V VOUT VDDQ.
CAPACITANCE (VDD = 3.0V & 3.3V, TA = 23C, f = 1MHz, VREF =0.9V 50 mV)
Pin Clock RAS, CAS, WE, CS, CKE, DQM Address DQ0 ~ DQ15 Symbol CCLK CIN CADD ... |
Description |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行54FBGA移动SDRAM
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File Size |
111.99K /
12 Page |
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ABRACON[Abracon Corporation]
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Part No. |
ASMP
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OCR Text |
...ad Output Voltage Start-up time Tri-state function Disabled current OE Stand-By Current (Option - B) Jitter (Peak to Peak) RMS One Sigma Agi...LEADED PROGRAMMABLE SURFACEMOUNT CRYSTAL CLOCK OSCILLATOR
ASMP
OUTLINE DRAWING:
Pb RoHS Complia... |
Description |
PLASTIC J-LEADED PROGRAMMABLE SURFACEMOUNT CRYSTAL CLOCK OSCILLATOR
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File Size |
183.38K /
2 Page |
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it Online |
Download Datasheet
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-ZC750 K4S56163LF-ZE1L0 K4S56163LF-ZN1L0
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OCR Text |
...all bi-directional buffers with tri-state outputs. 5. Dout is disabled, 0V VOUT VDDQ.
CAPACITANCE (VDD = 2.5V,
Pin Clock RAS, CAS, WE, CS, CKE, DQM Address DQ0 ~ DQ15
TA = 23C, f = 1MHz, VREF =0.9V 50 mV) Symbol CCLK CIN CADD COUT... |
Description |
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM
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File Size |
112.21K /
12 Page |
View
it Online |
Download Datasheet
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233E-F75 K4M513233E-L K4M513233E-MC K4M513233E-MEC K4M513233E-MC1L0
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OCR Text |
...all bi-directional buffers with tri-state outputs. 4. Dout is disabled, 0V VOUT VDDQ.
CAPACITANCE (VDD = 3.0V & 3.3V, TA = 23C, f = 1MHz, VREF =0.9V 50 mV)
Pin Clock RAS, CAS, WE, CS, CKE DQM Address DQ0 ~ DQ31 Symbol CCLK CIN CIN CA... |
Description |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
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File Size |
138.60K /
12 Page |
View
it Online |
Download Datasheet
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323LE-MC K4M51323LE-EL800
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OCR Text |
...all bi-directional buffers with tri-state outputs. 5. Dout is disabled, 0V VOUT VDDQ.
CAPACITANCE (VDD = 2.5V, TA = 23C, f = 1MHz, VREF =0.9V 50 mV)
Pin Clock RAS, CAS, WE, CS, CKE DQM Address DQ0 ~ DQ31 Symbol CCLK CIN CIN CADD COUT... |
Description |
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
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File Size |
138.94K /
12 Page |
View
it Online |
Download Datasheet
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Price and Availability
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