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PHILIPS
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| Part No. |
BGT211
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| OCR Text |
...ve fall time CONDITIONS vBE = 0 v TYP. MAX. 850 400 5 10 100 2.0 0.1 UNIT v v A A W v s
Tmb 25 C IC = 3.0 A; IB = 0.4 A ICon = 3.0 A; IB...us ICmax 100 us 1
II
IBon
LB T.U.T.
-vBB
500 us
Fig.16. Test circuit RBSOA. vCC = 15... |
| Description |
Silicon Diffused Power Transistor
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| File Size |
77.44K /
8 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4614A
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| OCR Text |
v (d-s) mosfet
v ds (v) i d (a) 5.8 4.8 -3.9 -3.4 symbol nch limit pch limit units v ds 40 -40 v gs 20 20 t a =25c 5.8 -3.9 t a =70c 4.5 ...us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 5 10 15 20 25 30 0.... |
| Description |
N & P-Channel 40-v (D-S) MOSFET Fast switching speed
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| File Size |
373.53K /
7 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4611
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| OCR Text |
v (d-s) mosfet
v ds (v) i d (a) 7.7 6.5 -5.0 -4.3 symbol nch limit pch limit units v ds 60 -60 v gs 20 20 t a =25c 7.7 -4.3 t a =70c 6.5 -...us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 20 40 60 80 100 0.0... |
| Description |
N & P-Channel 60-v (D-S) MOSFET Fast switching speed
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| File Size |
350.15K /
7 Page |
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it Online |
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SEMIWELL[SemiWell Semiconductor]
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| Part No. |
SDW80S600
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| OCR Text |
...0 2650 270 - 40 ~ 150
Units
v A A A W C
Thermal Characteristics
Symbol
RthJC RthCS RthJA
Parameter
Maximum Thermal Resistance, ...us 1A , vR=30v ,di/dt = -50A/us
Reverse Recovery Current IF = 40A , vR=30v ,di/dt = -50A/us Rever... |
| Description |
65ns Fast Recovery Diode, 600v vrrm, 80A If, 1.5v Peak Forward voltage
Fast Soft Recovery Rectifier Diode
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| File Size |
629.03K /
5 Page |
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it Online |
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