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TY Semiconductor Co., L...
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| Part No. |
2SC3515
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| Description |
High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE(sat) = 0.5V (max)
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| File Size |
849.93K /
4 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
FDD5353
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| Description |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
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| File Size |
281.26K /
6 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
2SB806
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| Description |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
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| File Size |
268.88K /
3 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
2SD2403
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| Description |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
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| File Size |
162.36K /
2 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
2SD1006
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| Description |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
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| File Size |
142.67K /
1 Page |
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it Online |
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Price and Availability
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