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POLYFET[Polyfet RF Devices]
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| Part No. |
F1034 POLYFETRFDEVICES-F1034
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| OCR Text |
...0V
o
-65 o C to 150o C
0.8 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 14 45 TYP
5WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.2 A, ... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
30.63K /
2 Page |
 View
it Online |
Download Datasheet
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POLYFET[Polyfet RF Devices]
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| Part No. |
F2021
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| OCR Text |
... Relative TEST CONDITIONS Idq = 0.6 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.6 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.6 A, Vds = 28.0 V, F = 1000 MHz
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
36.69K /
2 Page |
View
it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F2046
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| OCR Text |
...0V
o
-65 o C to 150o C
0.8 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 45 TYP
2.5WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.2 A... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
37.95K /
2 Page |
View
it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F2047
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| OCR Text |
... Relative TEST CONDITIONS Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
| File Size |
35.11K /
2 Page |
View
it Online |
Download Datasheet |
|
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