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  1.6w Datasheet PDF File

For 1.6w Found Datasheets File :: 2674    Search Time::1.61ms    
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    MAX1843 MAX1843EGI

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Part No. MAX1843 MAX1843EGI
OCR Text 19-1986; Rev 1; 3/02 KIT EVALUATION LABLE AVAI 2.7A, 1MHz, Low-Voltage, Step-Down Regulator with Internal Synchronous Rectification in...6W Operating Temperature Range ...........................-40C to +85C All Other Pins to GND...........
Description 2.7A, 1MHz, Low-Voltage, Step-Down Regulator with Internal Synchronous Rectification in QFN Package
2.7A / 1MHz / Low-Voltage / Step-Down Regulator with Internal Synchronous Rectification in QFN Package

File Size 362.90K  /  13 Page

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    MRF317

MOTOROLA[Motorola, Inc]
Part No. MRF317
OCR Text ...tch at all Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability * High Output Saturation Power -- Ideally Suited for...6W 80 Pin = 10 W 8W 60 40 f = 100 MHz 28 f, FREQUENCY (MHz) VCC, SUPPLY VOLTAGE (VOLTS) ...
Description BROADBAND RF POWER TRANSISTOR NPN SILICON

File Size 113.55K  /  6 Page

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    ALP121AAX

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. ALP121AAX
OCR Text 1.5-inch TFT LCD Module Overview This 1.5 inch low temperature poly- silicon TFT-LCD module consists of LCD panel and backlight. This is s...6W. * Display surface luminance is typ 200cd/m2. Specifications Item Dot count (H) x (V) Effecti...
Description Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:12-35 RoHS Compliant: No
Low-Temperature Polysilicon 1.5-inch TFT LCD Module

File Size 679.79K  /  8 Page

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    APT5010B2LC APT5010LLC

ADPOW[Advanced Power Technology]
Part No. APT5010B2LC APT5010LLC
OCR Text ... TC = 25C Pulsed Drain Current 1 T-MAXTM Y MIN Lower Input Capacitance Easier To Drive Popular TMax Package D G S R A...6W VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C SOURCE-DRAIN DIODE RATINGS AND CHARACTERIS...
Description Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 117.68K  /  2 Page

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    APT5010B2LL APT5010LLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2LL APT5010LLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 46 184 1.3 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 55.78K  /  2 Page

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    APT5010B2 APT5010B2FLL APT5010LFLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 46 184 1.3 5 250 500 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 54.02K  /  2 Page

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    APT5010JFLL

ADPOW[Advanced Power Technology]
Part No. APT5010JFLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 44 176 1.3 5 250 500 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.49K  /  2 Page

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    APT5010JLC

Advanced Power Technology Ltd.
Part No. APT5010JLC
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 44 176 1....
Description POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT5010JLL

ADPOW[Advanced Power Technology]
Part No. APT5010JLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 44 176 1.3 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.35K  /  2 Page

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    APT5010LLC APT5010B2LC APT5010B2LC-06

Advanced Power Technolo...
Advanced Power Technology Ltd.
Part No. APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text ... TC = 25C Pulsed Drain Current 1 B2LC T-MAXTM TO-264 LLC D G S All Ratings: TC = 25C unless otherwise specified. APT5010...6W MIN TYP MAX UNIT 5375 1040 185 145 34 76 12 15 28 4.6 6500 1460 280 220 41 120 24 30 42 10....
Description 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm

File Size 64.96K  /  4 Page

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