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Infineon Technologies A...
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| Part No. |
IHW20N135R3
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| OCR Text |
...1mhz pf gate charge q g v cc =1080v, i c =20.0a, v ge =15v - 195.0 - nc switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-off delay time t d(off) ... |
| Description |
Reverse conducting IGBT with monolithic body diode
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| File Size |
2,015.45K /
15 Page |
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it Online |
Download Datasheet
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Alpha & Omega Semicondu...
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| Part No. |
AOK20B135D1
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| OCR Text |
...emitter charge v ge =15v, v ce =1080v, i c =20a switching parameters, (load iductive, t j =25c) total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz f e off - 1.05 - mj t d(off) - 180 - ns t f - 300 - ns e off - 1.76 - mj this prod... |
| Description |
1350V, 20A Alpha IGBT TM with Diode
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| File Size |
718.33K /
8 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semicondu...
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| Part No. |
AOK20B135E1
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| OCR Text |
...emitter charge v ge =15v, v ce =1080v, i c =20a switching parameters, (load inductive, t j =25c) total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz t j =175c v ge =15v, v ce =600v, i c =20a, r g =15 ? , parasitic inductance=150n... |
| Description |
Minimal gate spike due to high input capacitance
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| File Size |
662.25K /
8 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semicondu...
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| Part No. |
AOK30B135W1
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| OCR Text |
...emitter charge v ge =15v, v ce =1080v, i c =30a switching parameters, (load inductive, t j =25c) total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz f e off - 1.47 - mj t d(off) - 154 - ns t f - 208 - ns e off - 1.63 - mj this pro... |
| Description |
Minimal gate spike due to high input capacitance
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| File Size |
518.43K /
8 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
IHW40N135R3
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| OCR Text |
...1mhz pf gate charge q g v cc =1080v, i c =40.0a, v ge =15v - 365.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol con... |
| Description |
Reverse conducting IGBT with monolithic body diode
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| File Size |
1,860.54K /
15 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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| Part No. |
AOK30B135W1
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| OCR Text |
...emitter charge v ge =15v, v ce =1080v, i c =30a switching parameters, (load inductive, t j =25c) total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz f e off - 1.47 - mj t d(off) - 154 - ns t f - 208 - ns e off - 1.63 - mj this pro... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
533.88K /
8 Page |
View
it Online |
Download Datasheet |
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