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  1100a Datasheet PDF File

For 1100a Found Datasheets File :: 122    Search Time::1.532ms    
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    IXYS[IXYS Corporation]
Part No. L011 MEO550-02DA
OCR Text ... mC VVJ= 100V R T = 100C IF=1100a IF= 550A IF= 275A 60 A 50 IRM 40 30 20 10 0 A/ms 1000 -diF/dt TVJ= 100C VR = 100V IF=1100a IF= 550A IF= 275A TVJ=125C TVJ= 25C 1.5 1.0 0.5 0.0 100 0.5 1.0 VF V 1.5 0 200 ...
Description Fast Recovery Epitaxial Diode (FRED) Module

File Size 51.99K  /  2 Page

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    Infineon Technologies A...
Part No. IHW50N65R5
OCR Text ...400v, i f =50.0a, di f /dt =1100a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 29 - ns rise time t r - 22 - ns turn-o...
Description Qualified according to JESD-022 for target applications

File Size 2,065.44K  /  15 Page

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    VMI[Voltage Multipliers Inc.]
ETC[ETC]
Part No. 1106A 1106FA 1106UFA 1102FA 1102A 1102UFA 1110A 1110FA 1110UFA
OCR Text ...A * 1102UFA - 1110UFA 1.6 1.4 1100a-FA MAXIMUM FORWARD CURRENT VS. TEMPERATURE 2.6 2.4 2.2 Forward Voltage (V) 2.0 TYPICAL FORWARD VOLTAGE VS. FORWARD CURRENT AT 25C Maximum Current (I) 1.2 1 1100UFA 1100UFA 1.8 1.6 1.4...
Description 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time
200 V - 1000 V Single Phase Bridge

File Size 63.07K  /  2 Page

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    IHW20N65R5

Infineon Technologies AG
Part No. IHW20N65R5
OCR Text ...400v, i f =20.0a, di f /dt =1100a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 22 - ns rise time t r - 16 - ns turn-o...
Description high power thyristor diode

File Size 2,024.06K  /  15 Page

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    SCT3060AL

Rohm
Part No. SCT3060AL
OCR Text ...i f = 13a, v r = 300v di/dt = 1100a/ ? s -15-ns reverse recovery charge forward voltage v sd *3 v gs = 0v, i s = 13a - 3.2 - peak reverse recovery current i rrm *3 -8-a q rr *3 -55-nc 4/12 2017.08- rev.c datasheet www.rohm.c...
Description    N-channel SiC power MOSFET

File Size 728.99K  /  14 Page

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    S4101

Rohm
Part No. S4101
OCR Text ...i f = 20a, v r = 600v di/dt = 1100a/ ? s -25-ns nc a 55 a inverse diode direct current, pulsed i sm *2 i rrm *3 -9- peak reverse recovery current inverse diode continuous, forward current i s *1 t c = 25c -- - - 137 a forward voltag...
Description    N-channel SiC power MOSFET bare die

File Size 657.30K  /  13 Page

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    S4102

Rohm
Part No. S4102
OCR Text ...i f = 27a, v r = 600v di/dt = 1100a/ ? s -27-ns reverse recovery charge forward voltage v sd *3 v gs = 0v, i s = 27a - 3.2 - a inverse diode direct current, pulsed i sm *2 - - 180 a inverse diode continuous, forward current i s *1 ...
Description    N-channel SiC power MOSFET bare die

File Size 657.77K  /  13 Page

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    S4103

Rohm
Part No. S4103
OCR Text ... i f =36a, v r = 600v di/dt = 1100a/ ? s -28-ns reverse recovery charge forward voltage v sd *3 v gs = 0v, i s = 36a - 3.2 - peak reverse recovery current i rrm *3 -12- a q rr *3 - 175 - nc 4/11 2017.08 - rev.b datasheet www...
Description    N-channel SiC power MOSFET bare die

File Size 657.75K  /  13 Page

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    S4105

Rohm
Part No. S4105
OCR Text ...3 i f =5a, v r = 600v di/dt = 1100a/ ? s -13-ns reverse recovery charge forward voltage v sd *3 v gs = 0v, i s = 5a - 3.2 - a inverse diode direct current, pulsed i sm *2 - - 42 a inverse diode continuous, forward current i s *1 t ...
Description    N-channel SiC power MOSFET bare die

File Size 666.88K  /  13 Page

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For 1100a Found Datasheets File :: 122    Search Time::1.532ms    
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