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IRF[International Rectifier]
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| Part No. |
IRHYS67234CM IRHYS63234CM
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| OCR Text |
...= -20V VGS =12V, ID = 12A VDS = 125v VDD = 125v, ID = 12A V GS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Ga... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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| File Size |
188.86K /
8 Page |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX4990ETD_ MAX4990E MAX4990ETD
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| OCR Text |
...A, VB < +0.6V, VDD = +3V VCS = +125v, ISOURCE = 1mA VA = +125v, VB = +125v, shutdown mode, VCS = +125v VA = 0V, VB = unconnected, shutdown mode, VCS = +125v VA = +0.1V, VB = 0V, shutdown mode, CS = unconnected CEL = 872pF, RSLEW = 375k Huma... |
| Description |
High-Voltage, ±15kV ESD-Protected Electroluminescent Lamp Driver
High-Voltage, 【15kV ESD-Protected Electroluminescent Lamp Driver
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| File Size |
213.48K /
15 Page |
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it Online |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX5062DASA MAX5062 MAX5062AASA MAX5062BASA MAX5062CASA
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| OCR Text |
125v/2A, High-Speed, Half-Bridge MOSFET Drivers
General Description
The MAX5062/MAX5063/MAX5064 high-frequency, 125v half-bridge, n-channel MOSFET drivers drive highand low-side MOSFETs in high-voltage applications. These drivers are inde... |
| Description |
125v/2A, High-Speed, Half-Bridge MOSFET Drivers
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| File Size |
465.27K /
19 Page |
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it Online |
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UNISONIC TECHNOLOGIES CO LTD
UTC[Unisonic Technologies]
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| Part No. |
MJE13002
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| OCR Text |
...ISTICS(TABLE 1) Delay Time (Vcc=125v,Ic=1A, Rise Time IB1=IB2=0.2A,tp=25s, Storage Time Duty Cycle1%) Fall Time INDUCTIVE LOAD, CLAMPED (TABLE 1,FIGURE 12) Storage Time (Ic=1A,Vclamp=300V, Crossover Time IB1=0.2A,VBE(off)=5V,Tc=100) Fall Ti... |
| Description |
1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN SILICON POWER TRANSISTOR
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| File Size |
147.77K /
7 Page |
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it Online |
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??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
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| Part No. |
MJE13003L-X-TA3-F-T MJE13003 MJE13003-TO-220 MJE13003-X-TA3-F-T
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| OCR Text |
...MHz pF
tD tR tS tFALL
VCC=125v, IC=1A, IB1=IB2=0.2A, tP=25 s, Duty Cycle 1%
0.05 0.5 2 0.4
0.1 1 4 0.7
s s s s 2 of 7
UNISONIC TECHNOLOGIES CO., LTD
QW-R203-017,F
MJE13003
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETE... |
| Description |
NPN EPITAXIAL SILICON TRANSISTOR npn型外延硅晶体
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| File Size |
144.27K /
7 Page |
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SamHop Microelectronics
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| Part No. |
SDD02N25
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| OCR Text |
...istics gate-source charge v dd =125v i d =1a v gs =10v r gen =25 ohm total gate charge rise time turn-off delay time v ds =125v,i d =1a,v gs =10v fall time turn-on delay time ohm v gs =10v , i d =1a v ds =10v , i d =1a input capacitance out... |
| Description |
N-Channel Field Effect Transistor
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| File Size |
106.58K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
MJE13007F
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| OCR Text |
....1MHz VCE = 10V, IC = 0.5A VCC =125v, IC = 5A IB1 = - IB2 = 1A RL = 50 4 1.6 3 0.7 110 8 5 Min. 400 Typ. Max. 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz s s s Units V mA
VBE(sat) Cob fT tON tSTG tF
Base-Emitter Saturation Voltage Output C... |
| Description |
High Voltage Switch Mode Application
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| File Size |
50.06K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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