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  1mil Datasheet PDF File

For 1mil Found Datasheets File :: 88    Search Time::1.735ms    
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    INTERSIL[Intersil Corporation]
Part No. HA3-2705-5 HA9P2705-5 HA-2705
OCR Text ...SIONS: 70mils x 60mils x 19mils 1mil METALLIZATION: Type: Al, 1% Cu Thickness: 16kA 2kA GLASSIVATION: Type: Nitride (Si3N4) over Silox (SiO 2, 5% Phos) Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 2kA DIE ATTACH: Material: Silver Epox...
Description IC OP AMP SINGLE GP 40V 8 pin PDIP
LOW POWER, HIGH PERFORMANCE OPERATIONAL AMPLIFIER

File Size 476.26K  /  3 Page

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    ADN2821ACHIPS-05K ADN2821ACHIPS-02K ADN2821ACHIPS-10K ADN2821

Analog Devices
Part No. ADN2821ACHIPS-05K ADN2821ACHIPS-02K ADN2821ACHIPS-10K ADN2821
OCR Text ...mm x 1.2mm (edge-edge including 1mil scribe) Die Thickness 10mils = 0.25mm Passivation Openings 0.075 mm x 0.075 mm (pads 1-8, 9, 10, 13, 15, 16, 17) 0.144mm x 0.075mm (pads 9, 11, 12, 14) Passivation Composition 5000A Si3N4 (to...
Description 11.1 Gbps 3.3V Low Noise High Gain Transimpedance Amplifier

File Size 149.07K  /  9 Page

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    ADN2821XCHIP-10KWP ADN2821XCHIP-05KWP ADN2821XCHIP-02KWP

AD[Analog Devices]
Part No. ADN2821XCHIP-10KWP ADN2821XCHIP-05KWP ADN2821XCHIP-02KWP
OCR Text ...mm x 1.2mm (edge-edge including 1mil scribe) Die Thickness 10mils = 0.25mm Passivation Openings 0.075 mm x 0.075 mm (pads 1-8, 9, 10, 13, 15, 16, 17) 0.144mm x 0.075mm (pads 9, 11, 12, 14) Passivation Composition 5000A Si3N4 (to...
Description 11.1 Gbps 3.3V Transimpedance Amplifier

File Size 142.53K  /  8 Page

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    ADN2880XCHIPS ADN2880ACHIPS

Analog Devices
Part No. ADN2880XCHIPS ADN2880ACHIPS
OCR Text ...mm x 1.2mm (edge-edge including 1mil scribe) Die Thickness 10mils = 0.25mm Passivation Openings 0.075 mm x 0.075 mm (pads 1-8, 9, 10, 13, 15, 16, 17) 0.144mm x 0.075mm (pads 9, 11, 12, 14) Passivation Composition 5000A Si3N4 (to...
Description 3.2 Gbps 3.3V Low Noise TIA for Small Form Factors

File Size 158.65K  /  10 Page

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    ADN2882XCHIPS-WP ADN2882

AD[Analog Devices]
Part No. ADN2882XCHIPS-WP ADN2882
OCR Text ...mm x 1.2mm (edge-edge including 1mil scribe) Die Thickness 10mils = 0.25mm Passivation Openings 0.075 mm x 0.075 mm (pads 1-8, 9, 10, 13, 15, 16, 17) 0.144mm x 0.075mm (pads 9, 11, 12, 14) Passivation Composition 5000A Si3N4 (to...
Description 4.25 Gbps 3.3V Low Noise Transimpedance Amplifier

File Size 179.83K  /  10 Page

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    ADN2882 ADN2882XCHIPS ADN2882ACHIPS

Analog Devices
Part No. ADN2882 ADN2882XCHIPS ADN2882ACHIPS
OCR Text ...mm x 1.2mm (edge-edge including 1mil scribe) Die Thickness 10mils = 0.25mm Passivation Openings 0.075 mm x 0.075 mm (pads 1-8, 9, 10, 13, 15, 16, 17) 0.144mm x 0.075mm (pads 9, 11, 12, 14) Passivation Composition 5000A Si3N4 (to...
Description 4.25 Gbps 3.3 V Low Noise Transimpedance Amplifier

File Size 186.38K  /  11 Page

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    HMC395

Hittite Microwave Corporation
Part No. HMC395
OCR Text ... fixture connected via 0.025mm (1mil) diameter wire bonds of minimal length 0.5mm (20mils). Electrical Specifications, Vs= +5.0V, Rbias= 22 Ohm, TA = +25 C Parameter Gain DC - 1.0 GHz 1.0 - 4.0 GHz DC - 1.0 GHz 1.0 - 4.0 GHz DC - 1.0 GH...
Description InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz

File Size 197.46K  /  6 Page

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    IR2085 IR2085S

International Rectifier
Part No. IR2085 IR2085S
OCR Text ... (3F3) with 3:1 turns ratio and 1mil gap. The inductor core is an E14/3.5/5 (3F3) with one turn and a 5mil gap. The PCB has eight layers, with two layers for primary windings that are connected in parallel and each has three turns. Four lay...
Description High Speed 100V Self Oscillating 50% Duty Cycle Half Bridge Driver in a SO-8 package
From old datasheet system

File Size 72.83K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. HA5352IP HA5352 HA5352IB
OCR Text ...3110 x 525 25.4m 100 x 122 x 19 1mil METALLIZATION: Type: Metal 1: AlSiCu/TiW Thickness: Metal 1: 6kA 750A Type: Metal 2: AlSiCu Thickness: Metal 2: 16kA 1.1kA GLASSIVATION: Type: Sandwich Passivation Nitride - 4kA, Undoped Si Glass(USG) ...
Description Fast Acquisition Dual Sample and Hold Amplifier

File Size 57.48K  /  5 Page

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    HITTITE[Hittite Microwave Corporation]
Part No. HMC606
OCR Text ...fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25 C, Vcc1= Vcc2= 5V Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figu...
Description GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz

File Size 385.85K  /  6 Page

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For 1mil Found Datasheets File :: 88    Search Time::1.735ms    
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