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  2-5q1a Datasheet PDF File

For 2-5q1a Found Datasheets File :: 61    Search Time::0.937ms    
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    TPCA8025

Toshiba Semiconductor
Part No. TPCA8025
OCR Text ...t Applications 6.0 0.3 5.0 0.2 Unit: mm 1.27 0.4 0.1 8 5 0.05 M A * * * * * Small footprint due to a small and thin package Lo...5Q1A Drain power dissipation (t = 10 s) (Note 2b) 1.6 W TOSHIBA Single pulse avala...
Description Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications

File Size 203.69K  /  7 Page

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    TPCA8026

Toshiba Semiconductor
Part No. TPCA8026
OCR Text ...t Applications 6.0 0.3 5.0 0.2 Unit: mm 1.27 0.4 0.1 8 5 0.05 M A * * * * * Small footprint due to a small and thin package Lo...5Q1A PD 1.6 W Weight: 0.069 g (typ.) EAS IAR EAR Tch Tstg 263 45 3.4 150 -55 to 15...
Description Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?
Field Effect Transistor Silicon N-Channel MOS Type (U-MOS楼鲁)

File Size 148.11K  /  7 Page

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    TPCA8028-H

Toshiba Semiconductor
Part No. TPCA8028-H
OCR Text ...ource ON-resistance: RDS (ON) = 2.0 m (typ.) High forward transfer admittance: |Yfs| = 166 S (typ.) Low leakage current: IDSS = 10 A (max) (...5Q1A Pulsed (Note 1) (Tc=25) (t = 10 s) (Note 2a) JEITA TOSHIBA Drain power dissipation Dra...
Description Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?H)
Field Effect Transistor Silicon N-Channel MOS Type (U-MOS楼碌-H)

File Size 183.36K  /  7 Page

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    TPCA8102 TPCA810206

Toshiba Semiconductor
Part No. TPCA8102 TPCA810206
OCR Text ...nhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 5.00.2 0.150.05 1 0.950.05 4 0.595 A 5.00.2 S 1 4 0....5Q1A Pulsed (Note 1) Weight: 0.076 g (typ.) Drain power dissipation (Tc=25) Drain power dis...
Description Lithium Ion Battery Applications Notebook pc Applications Notebook PC Applications Portable Equipment Applications

File Size 287.59K  /  7 Page

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    TPCA8103 TPCA810306

Toshiba Semiconductor
Part No. TPCA8103 TPCA810306
OCR Text ...nhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 5.00.2 0.150.05 1 0.950.05 4 0.595 A 5.00.2 S 1 4 0....5Q1A Pulsed (Note 1) (Tc=25C) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Weight: 0.076 g (typ.)...
Description Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

File Size 280.13K  /  7 Page

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    TPCA8104

Toshiba Semiconductor
Part No. TPCA8104
OCR Text ...nhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 5.00.2 Low drain-source ON-resistance: RDS (ON) = 11 m (typ.) 0.150...5Q1A Drain power dissipation (Tc = 25C) Drain power dissipation (t = 10 s) (Note 2a) Drain power ...
Description High-Side Switching Applications

File Size 231.31K  /  7 Page

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    TPCA8105

Toshiba Semiconductor
Part No. TPCA8105
OCR Text ...ncement mode : Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200 A ) 5.00.2 Low drain-source ON resistance : RDS (ON) = 23 m (typ.) 0.15...5Q1A Drain power dissipation (Tc = 25C) Drain power dissipation (t = 10 s) (Note 2a) Drain power ...
Description Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications

File Size 283.46K  /  7 Page

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    TPCA8106

Toshiba Semiconductor
Part No. TPCA8106
OCR Text ...t Applications 6.0 0.3 5.0 0.2 Unit: mm 1.27 0.4 0.1 8 5 0.05 M A * * * * * Small footprint due to small and thin package Low ...5Q1A Drain power dissipation (t = 10 s) (Note 2b) 1.6 W Weight: 0.069 g (typ.) Sin...
Description Field Effect Transistor Silicon P Channel MOS Type (U-MOS?
Field Effect Transistor Silicon P Channel MOS Type (U-MOS楼麓)

File Size 204.39K  /  7 Page

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    TPCA8040-H

Toshiba Semiconductor
Part No. TPCA8040-H
OCR Text ...t Applications 6.0 0.3 5.0 0.2 Unit: mm 1.27 0.4 0.1 8 5 0.05 M A * * * * * * * Small footprint due to a small and thin packag...5Q1A PD 1.6 W Weight: 0.069 g (typ.) EAS IAR EAR Tch Tstg 110 23 2.1 150 -55 to 15...
Description Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?H)
Field Effect Transistor Silicon N-Channel MOS Type (U-MOS楼碌-H)

File Size 136.83K  /  7 Page

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    TPCA8042

Toshiba Semiconductor
Part No. TPCA8042
OCR Text ...t Applications 6.0 0.3 5.0 0.2 Unit: mm 1.27 0.4 0.1 8 5 0.05 M A * * * * * Small footprint due to a small and thin package Lo...5Q1A PD 1.6 W Weight: 0.069 g (typ.) EAS IAR EAR Tch Tstg 263 45 4.5 150 -55 to 15...
Description Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?
Field Effect Transistor Silicon N-Channel MOS Type (U-MOS楼鲁)

File Size 148.36K  /  7 Page

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