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  3.4a Datasheet PDF File

For 3.4a Found Datasheets File :: 813    Search Time::1.453ms    
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    NTE2935 NTE2933

NTE[NTE Electronics]
Part No. NTE2935 NTE2933
OCR Text .... . . . . . . . . . . . . . . . 34A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description 30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.32K  /  3 Page

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    BD4723G BD4742 BD4742G BD4722G BD4721 BD4721G BD4745 BD4745G BD4741 BD4741G BD4724 BD4724G BD4722 BD4746G BD4727G BD4727

ROHM[Rohm]
Part No. BD4723G BD4742 BD4742G BD4722G BD4721 BD4721G BD4745 BD4745G BD4741 BD4741G BD4724 BD4724G BD4722 BD4746G BD4727G BD4727 BD4739G BD4720 BD4720G
OCR Text ... 5 4.5 4 3.5 3 2.5 2 1.5 Icc1=1.34A 1 Icc2=1.46A 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 Vcc (V) I/O characteristic 6 5 4 Icc (A) Vout (V) 3 2 Vs=2.9V 1 dVs=50mV 0 Vs=2.95V 0 0.5 1 ...
Description System Reset IC

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    BSS123-7 BSS123

DIODES[Diodes Incorporated]
Part No. BSS123-7 BSS123
OCR Text ...7A, f = 1.0KHz VGS = 0V, IS = 0.34A 2. Short duration test pulse used to minimize self-heating effect. 0.7 0.6 VGS = 10, 7, 6, 5V 0.5 VGS = 4V 0.4 0.3 0.2 0.1 VGS = 3V 2.4 ID, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED DRAI...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 65.63K  /  3 Page

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    BSS123W BSS123-7

DIODES[Diodes Incorporated]
Part No. BSS123W BSS123-7
OCR Text ...7A, f = 1.0KHz VGS = 0V, IS = 0.34A 2. Short duration test pulse used to minimize self-heating effect. 0.7 0.6 VGS = 10, 7, 6, 5V 0.5 VGS = 4V 0.4 0.3 0.2 0.1 VGS = 3V 2.4 ID, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED DRAI...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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    FAN5070

FAIRCHILD[Fairchild Semiconductor]
Part No. FAN5070
OCR Text ... Diode 1.3H, 10A Inductor 1.0H, 34A Inductor N-Channel MOSFET N-Channel MOSFET 8.66K 27.4K 4.7 10K 10 DC/DC Controller DCR ~ 6m See Note 1. DCR ~ 1m RDS(ON) = 17m @ VGS = 4.5V See Note 2. RDS(ON) = 9.5m @ VGS = 4.5V See Note 2. IRMS = 2.3A ...
Description High Performance Programmable Synchronous DC-DC Controller
From old datasheet system

File Size 145.23K  /  14 Page

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    IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15

IRF[International Rectifier]
Part No. IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15
OCR Text ... -100V RDS(on) 0.07 ID -34A Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined w...
Description -100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings

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    MAX4074 MAX4074ESA MAX4074EUK- MAX4075 MAX4075ESA MAX4075EUA MAX4076 MAX4076ESA MAX4076EUK-T MAX4077 MAX4077ESA MAX4077E

MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Part No. MAX4074 MAX4074ESA MAX4074EUK- MAX4075 MAX4075ESA MAX4075EUA MAX4076 MAX4076ESA MAX4076EUK-T MAX4077 MAX4077ESA MAX4077EUA MAX4078 MAX4078ESD MAX4078EUD MAX4074-MAX4078 MAX4074__ESA MAX4074__EUK- MAX4075__ESA MAX4075__EUA MAX4074EUK MAX4074ABESA MAX4075ABEUA MAX4075ABESA MAX4074ABEUK-T MAX4074BGEUK-T MAX4074BGESA MAX4075BGEUA MAX4075BGESA MAX4074BJESA MAX4074AJESA MAX4075AJESA MAX4075BJESA MAX4074BMESA MAX4075BMEUA MAX4074AOESA MAX4074AOEUK-T MAX4075AOEUA MAX4074BDEUK-T MAX4075BDEUA MAX4075BDESA MAX4074BNEUK-T MAX4074BKEUK-T MAX4074BJEUK-T MAX4075BJEUA MAX4074AKEUK-T MAX4075AKEUA
OCR Text ...o +5.5V supply and consume just 34A. GainAmp amplifiers are optimally compensated for each gain version, achieving gain bandwidth (GBW) products up to 4MHz (AV = +25V/V to +101V/V). High-voltage fault protection withstands 17V at either inp...
Description Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 4V/V, noninverting gain 5V/V, -3dB BW 80kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 4V/V, noniverting gain 5V/V, -3dB BW 80kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 49V/V, noniverting gain 50V/V, -3dB BW 50kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 99V/V, noniverting gain 100V/V, -3dB BW 40kHZ.
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 20V/V, noninverting gain 21V/V, -3dB BW 40kHZ.
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 9V/V, noninverting gain 10V/V, -3dB BW 90kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 9V/V, noniverting gain 10V/V, -3dB BW 90kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 79V/V, noninverting gain 80V/V, -3dB BW 50kHZ.
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 3V/V, noninverting gain 4V/V, -3dB BW 90kHz.
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 30V/V, noninverting gain 31V/V, -3dB BW 89kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 0.25V/V, noninverting gain 1.25V/V, -3dB BW 200kHZ.
From old datasheet system
Micropower SOT23 Rail-to-Rail Fixed-Gain GainAmp/Open-Loop Op Amps
"?Dual, Low-Power, Rail-to-Rail, Open-Loop GainAmp."
"?Dual, Low-Power, Rail-to-Rail, Fixed-Gain Amp."
"Low-Power, SOT-23, Rail-to-Rail, Open-Loop GainAmp."
Micropower, SOT23, Rail-to-Rail, Fixed-Gain GainAmp Open-Loop GainAmps Op Amps
Micropower / SOT23 / Rail-to-Rail / Fixed-Gain / GainAmp/Open-Loop Op Amps
-Micropower, SOT23, Rail-to-Rail, Fixed-Gain, GainAmp/Open-Loop Op Amps
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 0.25V/V, noninverting gain 1.25V/V, -3dB BW 200kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 30V/V, noniverting gain 31V/V, -3dB BW 89kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 30V/V, noninverting gain 31V/V, -3dB BW 89kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 49V/V, noninverting gain 50V/V, -3dB BW 50kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 3V/V, noniverting gain 4V/V, -3dB BW 90kHZ.
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 49V/V, noninverting gain 50V/V, -3dB BW 50kHz.
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 79V/V, noninverting gain 80V/V, -3dB BW 50kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 20V/V, noniverting gain 21V/V, -3dB BW 40kHZ.
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 50V/V, noniverting gain 51V/V, -3dB BW 82kHZ.

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    IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF
OCR Text ...25C, ID = 1mA m VGS = 10V, ID = 34A e V V A VDS = VGS, ID = 250A VDS = 25V, ID = 34A VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 34A VDS = 48V VGS = 10V VDD = 30V ID = 34A RG = 12 VGS = 10V e e ...
Description Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 12mohm,身份证\u003d 57A条)
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 294.94K  /  12 Page

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    NDC7001 NDC7001C

FAIRCHILD[Fairchild Semiconductor]
Part No. NDC7001 NDC7001C
OCR Text ...(ON) = 2 @ VGS=10V P-Channel -0.34A, -50V. RDS(ON)= 5 @ VGS=-10V. High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation cu...
Description Dual N & P-Channel Enhancement Mode Field Effect Transistor

File Size 277.21K  /  13 Page

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    NDC7003P

FAIRCHILD[Fairchild Semiconductor]
Part No. NDC7003P
OCR Text ...gh side switch. Features -0.34A, -50V. RDS(ON)= 5 @ VGS=-10V. High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation cu...
Description Dual P-Channel Enhancement Mode Field Effect Transistor

File Size 251.73K  /  10 Page

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For 3.4a Found Datasheets File :: 813    Search Time::1.453ms    
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