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For 30-70 Found Datasheets File :: 220545    Search Time::2.796ms    
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    HYB3116160BSTL-70 HYB3116160BSTL-60 HYB3116160BSTL-50 HYB3116160BST-70 HYB3116160BST-60 HYB3116160BST-50 HYB3116160BSJ-7

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB3116160BSTL-70 HYB3116160BSTL-60 HYB3116160BSTL-50 HYB3116160BST-70 HYB3116160BST-60 HYB3116160BST-50 HYB3116160BSJ-70 HYB3116160BSJ-60 HYB3116160BSJ-50 HYB3118160BSTL-70 HYB3118160BSTL-60 HYB3118160BSTL-50 HYB3118160BST-70 HYB3118160BST-60 HYB3118160BST-50 HYB3118160BSJ-70 HYB3118160BSJ-60 HYB3118160BSJ-50 HYB3116160BSJ
OCR Text ...e time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns * * * * * * * * * * Single + 3.3 V ( 0.3 V) supply Low power dissipation max. 720 active mW ( HYB3118160BSJ/BST-50) max. 648 active mW ( HYB3118160BSJ/BST...
Description 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh)

File Size 256.12K  /  25 Page

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    Infineon
Part No. HYB3116165BSTL-70 HYB3116165BSTL-60 HYB3116165BSTL-50 HYB3116165BST-70 HYB3116165BST-60 HYB3116165BST-50 HYB3116165BSJ-70 HYB3116165BSJ-60 HYB3116165BSJ-50 HYB3118165BSTL-70 HYB3118165BSTL-60 HYB3118165BSTL-50 HYB3118165BST-70 HYB3118165BST-60 HYB3118165BST-50 HYB3118165BSJ-70 HYB3118165BSJ-60 HYB3118165BSJ-50
OCR Text ...e time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns * * * * * * * * * * Single + 3.3 V ( 0.3 V) supply Low power dissipation max. 720 active mW ( HYB3118165BSJ/BST-50) max. 648 active mW ( HYB3118165BSJ/BST...
Description 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh)

File Size 537.45K  /  52 Page

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    70-120225-2 70-320225-2 70-309222-2 70-109222-2 70-109222-2B 70-309222-2B 70-120226-2 70-118221-2 70-318221-2 70-308221-

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Part No. 70-120225-2 70-320225-2 70-309222-2 70-109222-2 70-109222-2B 70-309222-2B 70-120226-2 70-118221-2 70-318221-2 70-308221-2B 70-118221-2B 71-108221-2 70-108221-2B 70-318221-2B 70-121224-2 70-309225-2 70-312221-2B 70-308224-2 70-309224-2 70-311221-2 70-311225-2 70-308224-2B 70-312222-2 70-311226-2 70-311222-2 70-311222-2B 70-312224-2B 70-311224-2B 70-108225-2 70-108222-2B 70-109221-2B 70-109224-2B 70-111224-2 70-111222-2 70-108224-2B 70-111221-2B 70-111224-2B 70-109225-2 70-108226-2 70-109226-2 70-111222-2B 70-111225-2 70-112221-2 70-111226-2 70-318224-2 70-318222-2 70-114222-2 70-115221-2B 70-114226-2 70-114225-2 70-114224-2 70-112225-2 70-112224-2 70-112222-2 70-112221-2B 70-115224-2 70-112226-2 70-114221-2B 70-112222-2B 70-114222-2B 70-112224-2B 70-115222-2B 70-317221-2B 70-117221-2B
OCR Text ...150 a 50 a no nc cont. 60a 60 a 30 a 60a 60 a 30 a inrush 100 a 60 a 30 a 100 a 60 a 30 a r-4003c 1233 st. louis, missouri markham, o...70) 2.725 (type 71) 0.900 (type 70) 1.196 (type 71) 0.900 (type 70) 1.196 (type 71) 0.900 (type 70) ...
Description High current capacity control
   High current capacity control

File Size 316.18K  /  3 Page

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    TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L TC554161AFTI-10 TC554161AFTI-85 TC554161AFTI-85L TC554161AFTI

TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Part No. TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L TC554161AFTI-10 TC554161AFTI-85 TC554161AFTI-85L TC554161AFTI
OCR Text ...1 40 39 38 37 36 35 34 33 32 31 30 29 28 A4 A5 A6 A7 NC I/O1 I/O2 VDD GND I/O3 I/O4 LB OE OP NC I/O5 I/O6 GND VDD I/O7 I/O8 A8 A9 A10 A11 A1...70,-85,-10,-70L,-85L,-10L BLOCK DIAGRAM CE A0 A1 A2 A3 A11 A12 A13 A14 A15 A16 A17 ROW ADDRE...
Description 262,144-WORD BY 16-BIT STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 138.12K  /  10 Page

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    Maxim Integrated Products, Inc.
Part No. DS1230YL-70 DS1230Y-FIR
OCR Text ...4 15 16 17 nc a 14 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 a 13 a 12 a 11 a 10 a 9 a 8 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 34 nc gnd...70 ds1230y-70 ds1230ab-85 ds1230y-85 ds1230ab-100 ds1230y-100 parameter symbol min max min ma...
Description 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 POWERCAP MODULE-34
256k Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, DMA34

File Size 293.53K  /  16 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. HYM322160S-70 HYM322160S-60 HYM322160GS-60 HYM322160GS-70 HYM322160S 322160X Q67100-Q2017 Q67100-Q2014 Q67100-Q2015 Q67100-Q2016
OCR Text ...s ns ns ns ns max. - - 60 15 30 35 - 20 50 - 10000 200000 - - - 10000 45 30 - - - - - - tRC tPC tRAC tCAC tAA 110 40 - - - - 0 0 3 ...70 2M x 32-Bit AC Characteristics4) 5) (cont'd) TA = 0 to 70 C, VCC = 5 V 10 %, tT = 5 ns Parame...
Description 2M x 32-Bit Dynamic RAM Module 2M X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72
From old datasheet system

File Size 140.39K  /  9 Page

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    Maxim Integrated Products, Inc.
Part No. DS1245YP-70 DS1245AB-85 DS1245AB-70IND
OCR Text ...oe a10 ce dq7 dq5 dq6 32 30 29 28 27 26 25 24 23 22 21 19 20 a16 nc a12 a6 dq2 15 16 18 dq4 17 dq3 gnd 1 nc 2 3 a1...70 ds1245y-70 ds1245ab-85 ds1245y-85 parameter symbol min max min max units notes read cycle...
Description 1024k Nonvolatile SRAM 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
1024k Nonvolatile SRAM 128K X 8 NON-VOLATILE SRAM MODULE, 85 ns, DMA32
1024k Nonvolatile SRAM 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32

File Size 244.52K  /  13 Page

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    Winbond Electronics, Corp.
Part No. W27C02-70 W27C02 W27C02Q-70 W27C02P-70
OCR Text ... (max.) Read operating current: 30 mA (max.) Erase/Programming operating current: 30 mA (max.) Standby current: 20 A (max.) +12V erase/progr...70 -65 to +125 -0.5 to VDD +0.5 -0.5 to +7.0 -0.5 to +14.5 -0.5 to +14.5 UNIT C C V V V V Note: E...
Description EPROM 存储
EEPROM|256KX8|CMOS|TSSOP|32PIN|PLASTIC
EEPROM|256KX8|CMOS|LDCC|32PIN|PLASTIC
256K X 8 ELECTRICALLY ERASABLE EPROM
NVM > EPROM
EEPROM|256KX8|CMOS|DIP|32PIN|PLASTIC

File Size 282.87K  /  16 Page

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    AM29F010A-70 AM29F010A-55 AM29F010A-45 AM29F010A-120 AM29F010A-90 AM29F010A

AMD[Advanced Micro Devices]
Part No. AM29F010A-70 AM29F010A-55 AM29F010A-45 AM29F010A-120 AM29F010A-90 AM29F010A
OCR Text ... typical active read current -- 30 mA typical program/erase current -- <1 A typical standby current s Flexible sector architecture -- Eight ...70, 90, and 120 ns, allowing high-speed microprocessors to operate without wait states. To eliminate...
Description 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

File Size 189.22K  /  31 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB5118165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-50 HYB5116165BSJ-70 HYB5116165BSJ-60 HYB5116165BSJ-50 HB18165B HYB5116165BJ-50 HYB5116165BJ-60 HYB5116165BJ-70 HYB5116165BSJ-50- Q67100-Q1109 HYB5118165BJ-50 HYB5118165BJ-60 HYB5118165BJ-70 Q67100-Q1107 Q67100-Q1108
OCR Text ...e time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns * * * * * * * * * Single + 5 V ( 10 %) supply Low power dissipation max. 1100 active mW ( HYB5118165BSJ-50) max. 990 active mW ( HYB5118165BSJ-60) max. 88...
Description -1M x 16-Bit Dynamic RAM 1k & 4k Refresh
1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system

File Size 267.19K  /  26 Page

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