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  4.9.1.7mm Datasheet PDF File

For 4.9.1.7mm Found Datasheets File :: 4001    Search Time::9.766ms    
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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ...e - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5. Pin assignment of TBGA A3 ball is changed. (be...9 Apr. 24th 2004 3.0 1. PKG(TSOP1, WSOP1) Dimension Change May. 24th 2004 Note : For ...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ...nged from 50ns to 10ns.(page12) 4. min. tREA is changed from 35ns to 30ns.(page12) 5. min. tWC is changed from 50ns to 45ns.(page12) 6. Uniq...9 May. 24th 2003 Note : For more detailed features and specifications including FAQ, please re...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 601.33K  /  34 Page

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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ...e - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5. Pin assignment of TBGA A3 ball is changed. (be...9 x 11 /0.8mm pitch , Width 1.0 mm) - K9F5608U0C-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm) - K9F56XXU0...
Description 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM

MAXIM[Maxim Integrated Products]
Part No. MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM
OCR Text ... an internal reference (2.5V or 4.096V) providing a well-regulated, low-noise reference for both the ADC and DAC. Programmable reference mod...9.9kHz, fin2 = 10.2kHz SINAD > 70dB -3dB point 61 -70 66 72 100 1 dB dBc dBc dBc kHz MHz 2 ___...
Description 10-Bit Multichannel ADCs/DACs with FIFO Temperature Sensing and GPIO Ports
10-Bit, Multichannel ADCs/DACs with FIFO, Temperature Sensing, and GPIO Ports

File Size 1,321.21K  /  47 Page

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    PAQ50S48-1R2 PAQ50S48-1R8 PAQ50S48-2R5 PAQ50S48-3R3 PAQ50S48-5 PAQ100S48 PAQ100S48-1R2 PAQ100S48-1R8 PAQ100S48-2R5 PAQ10

东电?中国)投资有限公司
LAMBDA[DENSEI-LAMBDA]
Part No. PAQ50S48-1R2 PAQ50S48-1R8 PAQ50S48-2R5 PAQ50S48-3R3 PAQ50S48-5 PAQ100S48 PAQ100S48-1R2 PAQ100S48-1R8 PAQ100S48-2R5 PAQ100S48-3R3 PAQ100S48-5
OCR Text ...iency PAQ50S48 (Typ.) PAQ100S48 4. Cooling Method 5. Operating ambient temperature 6. Withstand voltage 7. Standard functions 8. Options 9. Safety standard 10. Dimensions (W H D) DC48V (DC36 ~ 76V) 1.2V / 1.8V / 2.5V types: -20~ +10% 3.3V /...
Description Single output DC-DC power module for TELECOM 单输出DC - DC电源模块为电

File Size 86.44K  /  1 Page

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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ...ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching Outline UPAK 3 D 2 1 4 G S 1. Gate 2. ...9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text ...50 mA) R DS = 2.2 typ. (VGS = -4 V , I D = -150 mA) * 4 V gate drive device. * Small package (MPAK) Outline MPAK 3 1 D 3 2 2 ...9 2.95 - 0.2 + 0.2 0.3 0.65 - 0.3 + 0.1 0.45 0.95 0.45 0.95 1.5 0 ~ 0.1 1.1...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.90K  /  8 Page

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    2SJ575

Hitachi Semiconductor
Part No. 2SJ575
OCR Text ...50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) * 4 V gate drive device. * Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G ...9 -- -- -- -- -- -- -- -- Unit V V A A V mS pF pF pF ns ns ns ns Test Conditions I D = -100 A, VGS...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.55K  /  8 Page

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    2SJ576

http://
HITACHI[Hitachi Semiconductor]
Part No. 2SJ576
OCR Text ...50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) * 4 V gate drive device. * Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G...9 -- -- -- -- -- -- -- -- Unit V V A A V mS pF pF pF ns ns ns ns Test Conditions I D = -100 A, VGS...
Description Silicon P Channel MOS FET High Speed Switching

File Size 26.18K  /  5 Page

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