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  5.00 03 180 Datasheet PDF File

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    3501-00 3501-11 3501-12 PE3501 PE3501-EK

PEREGRINE[Peregrine Semiconductor Corp.]
Part No. 3501-00 3501-11 3501-12 PE3501 PE3501-EK
OCR Text ...frequency range is 400 MHz to 3.5 GHz. The PE3501 operates on a nominal 3 V supply and draws only 12 mA. It is packaged in a small 8-lead TS...00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 S22 Magnitude (dB) ...
Description 3500 MHz Low Power UltraCMOS⑩ Divide-by-2 Prescaler
3500 MHz Low Power UltraCMOS Divide-by-2 Prescaler

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    RJK2054DPC-00-J0 RJK2054DPC

Renesas Electronics Corporation
Part No. RJK2054DPC-00-J0 RJK2054DPC
OCR Text ...DS(on) = 0.075 typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C) * Low drive current * High density mounting REJ03G1868-0100 Rev.1.00 Dec 08, 2009 Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2(S) 3(S) 4(G) 5678...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 83.51K  /  4 Page

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    4270-00 4270-02 4270-01 4270-51 4270-52

Integrated Circuit Systems
Part No. 4270-00 4270-02 4270-01 4270-51 4270-52
OCR Text ... dBc * High isolation: 90 dB at 5 MHz, 63 dB at 1000 MHz * Low insertion loss: 0.5 dB at 50 MHz, 0.70 dB at 1000 MHz * High input IP...00 C L -A-B4 6 0.125 5 C L PIN MAR 1 K 0.10 C 1 4 0.10 C 2 3 3.00 4 0.125 10...
Description SPST CATV UltraCMOSSwitch DC - 3000 MHz

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    RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. RJK1525DPS-00-T2 RJK1525DPS
OCR Text ... 8.3 0.88 95 0.3 Max -- 1 0.1 4.5 -- 0.110 -- -- -- -- -- -- -- -- -- -- 1.40 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Tes...00 Feb 08, 2007 page 2 of 6 RJK1525DPS Main Characteristics Power vs. Temperature Derating 4...
Description 17 A, 150 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220CFM, 3 PIN
Silicon N Channel MOS FET High Speed Power Switching
1 A low VF MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD 通道场效应晶体管高速电源开
1 A low VF MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD 通道场效应晶体管高速电源开

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    RJK5020DPK-00-T0 RJK5020DPK

Renesas Electronics Corporation
Part No. RJK5020DPK-00-T0 RJK5020DPK
OCR Text ...Ratings 500 30 40 120 40 120 12.5 8.6 200 0.625 150 -55 to +150 Unit V V A A A A A mJ W C/W C C Rev.2.00 Dec 19, 2006 page 1 of 6 RJK5020DPK Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate v...
Description Silicon N Channel MOS FET High Speed Power Switching

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    RJK1525DPS-00-T2 RJK1525DPS10 RJK1525DPS

Renesas Electronics Corporation
Part No. RJK1525DPS-00-T2 RJK1525DPS10 RJK1525DPS
OCR Text ... 8.3 0.88 95 0.3 Max -- 1 0.1 4.5 -- 0.110 -- -- -- -- -- -- -- -- -- -- 1.40 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Tes...00 Jun 30, 2010 Page 2 of 6 RJK1525DPS Preliminary Main Characteristics Power vs. Tempe...
Description    Silicon N Channel MOS FET High Speed Power Switching

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    RJF0612DPE-00-J3

Renesas Electronics Corporation
Part No. RJF0612DPE-00-J3
OCR Text ...te to source voltage v gss ?2.5 v drain current i d note3 50 a body-drain diode reverse drain current i dr 50 a avalanche curre...00 nov 01, 2012 rjf0612dpe target specifications r07ds0903ej0100 rev.1.00 page 2 of 7 nov ...
Description 60V - 50A - N Channel Thermal FET Power Switching

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    RJF0612JPE-00-J3

Renesas Electronics Corporation
Part No. RJF0612JPE-00-J3
OCR Text ...te to source voltage v gss ?2.5 v drain current i d note3 50 a body-drain diode reverse drain current i dr 50 a avalanche curre...00 oct 31, 2012 rjf0612jpe target specifications r07ds0887ej0100 rev.1.00 page 2 of 7 oct ...
Description 60V - 50A - N Channel Thermal FET Power Switching

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    RJE0603JPE-00-J3 RJE0603JPE

Renesas Electronics Corporation
Part No. RJE0603JPE-00-J3 RJE0603JPE
OCR Text ... bound value. Ratings -60 -16 2.5 -50 Note3 -50 -15 964 100 150 -55 to +150 Unit V V V A A A mJ W C C REJ03G1907-0100 Rev.1.00 Apr 01, 2010 Page 1 of 6 RJE0603JPE Preliminary Typical Operation Characteristics (Ta = 25C) It...
Description Silicon P Channel MOS FET Series Power Switching

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