512k 64k x 8 one-time programm pdf Datasheet P2 Description --- IC-ON-LINE


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512k 64k x 8 one-time programm Datasheet PDF File

For 512k 64k x 8 one-time programm Found Datasheets File :: 150+ Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				ATMEL Corporation
Part No.	AT27C512R-45JU AT27C512R-45PU AT27C512R-70JU
Description	512k (64k x 8) one-time programmable, Read-only Memory
File Size	734.12K / 13 Page	View it Online	Download Datasheet

				CYPRESS SEMICONDUCTOR CORP
Part No.	CY14B108K-ZS25xIT CY14B108K-ZS45xI CY14B108K-ZS45xIT CY14B108M-ZSP25xI CY14B108M-ZSP25xIT CY14B108M-ZSP45xI CY14B108K1106
Description	8-Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock 8 Mbit (1024K x 8/512k x 16) nvSRAM with Real Time Clock; Organization: 1Mb x 8; Vcc (V): 2.7 to 3.6 V; Density: 8 Mb; Package: TSOP
File Size	787.75K / 33 Page	View it Online	Download Datasheet

				MCNIx[Macronix International]
Part No.	Mx26C4000B Mx26C4000BMC-10 Mx26C4000BMC-12 Mx26C4000BMC-15 Mx26C4000BMC-90 Mx26C4000BMI-10 Mx26C4000BMI-12 Mx26C4000BMI-15 Mx26C4000BMI-90 Mx26C4000BPC-10 Mx26C4000BPC-12 Mx26C4000BPC-15 Mx26C4000BPC-90 Mx26C4000BPI-10 Mx26C4000BPI-12 Mx26C4000BPI-15 Mx26C4000BPI-90 Mx26C4000BQC-10 Mx26C4000BQC-12 Mx26C4000BQC-15 Mx26C4000BQC-90 Mx26C4000BQI-10 Mx26C4000BQI-12 Mx26C4000BQI-15 Mx26C4000BQI-90 Mx26C4000BTC-10 Mx26C4000BTC-12 Mx26C4000BTC-15 Mx26C4000BTC-90 Mx26C4000BTI-10 Mx26C4000BTI-15 Mx26C4000BTI-12
Description	4M-BIT [512k x 8] CMOS MULTIPLE-TIME-programmABLE-EPROM
File Size	956.57K / 20 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	5962D9960601QUA 5962D9960601QUC 5962D9960601QUx 5962D9960601TUA 5962D9960601TUC 5962D9960601TUx 5962D9960602QUA 5962D9960602QUC 5962D9960602QUx 5962D9960602TUA 5962D9960602TUx 5962D9960602TUC 5962-9960601TUA 5962-9960602TUx 5962-9960601TUC 5962P9960601TUA 5962P9960601TUC 5962P9960601TUx UT7Q512k-UPx UT7Q512k-UWC
Description	512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none. 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none. 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none. 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)). 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)). 512k x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option. 512k x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
File Size	106.53K / 16 Page	View it Online	Download Datasheet

				Alliance Semiconductor
Part No.	AS29LV400T-90TI
Description	3V 512k x 8/256K x 16 CMOS flash EEPROM, 90ns access time
File Size	211.66K / 24 Page	View it Online	Download Datasheet

				Spansion, Inc. SPANSION LLC
Part No.	AM29F040B-120JF AM29F040B-90ED
Description	Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512k x 8; Package/Case:32-PLCC; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting Type:Surface Mount RoHS Compliant: Yes 512k x 8 FLASH 5V PROM, 120 ns, PQCC32 Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512k x 8; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes
File Size	564.73K / 36 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	5962D0053601QUA 5962D0053601TxA 5962D0053602TxA 5962D0053601TxC 5962D0053602QxA 5962D0053602TUC 5962D0053602QxC 5962D0053603QUA 5962D0053601TUA 5962D0053601Qxx 5962D0053601TUC 5962D0053601TUx 5962D0053602TUx 5962D0053602QUx 5962D0053602Txx 5962D0053602Qxx 5962D0053602QUA 5962D0053601QxA 5962D0053601Txx 5962D0053602QUC 5962D0053602TxC 5962D0053601QxC 5962D0053602TUA 5962D0053601QUx 5962D0053601QUC 5962D0053603QUx 5962D0053603QxA 5962D0053603Qxx 5962D0053603QxC 5962D0053603QUC UT9Q512-IWx UT9Q512-IWC UT9Q512-20ICC UT9Q512-20ICx UT9Q512-20IPC UT9Q512-20IWC UT9Q512-20UCC UT9Q512-20UCA UT9Q512-20UCx UT9Q512-20UWA UT9Q512-ICA UT9Q512-IPC UT9Q512-20ICA UT9Q512-20IWA UT9Q512-20IWx UT9Q512-20UPC UT9Q512-20UWC UT9Q512-20UWx UT9Q512-ICC UT9Q512-ICx UT9Q512-IWA UT9Q512-UCA 5962D0053603TxC 5962D0053604TxC 5962L0053601TxC 5962L0053602TxC 5962L0053603TxC 5962L0053604TxC 5962P0053601TxC 5962P0053602TxC 5962P0053603TxC 5962P0053604TxC 5962L0053601QUA 5962L0053601QUC 5962L0053601QUx 5962L0053601QxA 5962L0053601QxC 5962L0053601Qxx 5962L0053601TUA 5962L0053601TUC 5962L0053601TUx 5962L0053601Txx 5962L0053602QUA 5962L0053602QUC 5962L0053602QUx 5962L0053602QxA 5962L0053602QxC 5962L0053602TUA 5962L0053602
Description	512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option. 512k x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. 512k x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. 512k x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option. 512k x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512k x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped. 512k x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped. 512k x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)).
File Size	128.60K / 15 Page	View it Online	Download Datasheet

				CYPRESS SEMICONDUCTOR CORP Cypress Semiconductor, Corp.
Part No.	CY14B104K CY14B104K-ZS20xC CY14B104K-ZS20xCT CY14B104K-ZS20xI CY14B104K-ZS20xIT CY14B104K-ZS25xC CY14B104K-ZS25xCT CY14B104K-ZS25xI CY14B104K-ZS25xIT CY14B104K-ZS45xC CY14B104K-ZS45xCT CY14B104K-ZS45xI CY14B104K-ZS45xIT CY14B104M CY14B104M-ZSP45xC CY14B104M-ZSP45xCT CY14B104M-ZSP45xI CY14B104M-ZSP45xIT CY14B104M-ZSP25xC CY14B104M-ZSP25xCT CY14B104M-ZSP25xI CY14B104M-ZSP25xIT CY14B104M-ZSP20xI CY14B104M-ZSP20xIT CY14B104M-ZSP20xCT
Description	Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: 0° to 70°C; Package: 44-TSOP-II; Features: Real-Time Clock 4 Mbit (512k x 8/256K x 16) nvSRAM with Real Time Clock; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K x 16 NON-VOLATILE SRAM, 25 ns, PDSO54 4 Mbit (512k x 8/256K x 16) nvSRAM with Real Time Clock; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K x 16 NON-VOLATILE SRAM, 20 ns, PDSO54
File Size	678.10K / 33 Page	View it Online	Download Datasheet

				Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
Part No.	CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC CY7C1380C-167AI CY7C1380C-167BGC CY7C1380C-167BZI CY7C1380C-133AC CY7C1380C-225AC CY7C1380C-167BGI CY7C1380C-250AC CY7C1380C-250BZC CY7C1382C-225BZC CY7C1382C-250BZC CY7C1380C-225BZC CY7C1382C-167AC CY7C1382C-167BZI
Description	Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512k x 36/1M x 18) Pipelined SRAM 1M x 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512k x 36/1M x 18) Pipelined SRAM 1M x 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512k x 36/1M x 18) Pipelined SRAM 512k x 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512k x 36/1M x 18) Pipelined SRAM 512k x 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512k x 36/1M x 18) Pipelined SRAM 512k x 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512k x 36/1M x 18) Pipelined SRAM 512k x 36 CACHE SRAM, 3.4 ns, PQFP100
File Size	442.13K / 36 Page	View it Online	Download Datasheet

				Macronix International
Part No.	Mx29LV400TMC-55 Mx29LV400BxBC-55R
Description	Access time: 55ns; 4M-bit (512k x 8/256K x 16) CMOS single voltage 3V only flash memory
File Size	1,222.85K / 59 Page	View it Online	Download Datasheet

For 512k 64k x 8 one-time programm Found Datasheets File :: 150+ Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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