6.0a 400v pdf Datasheet P2 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : LX5514 PST3128 40106 SUGC10JH RT2725B7 02DZ20 AT27C TDA11
	Product Description
	Full Text Search

6.0a 400v Datasheet PDF File

For 6.0a 400v Found Datasheets File :: 2353 Search Time::1.406ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	HGTG20N60B3D G20N60B3 G20N60B3D
OCR Text	...1.8 2.1 5.0 MAX 250 2.0 2.0 2.5 6.0 100 UNITS V A mA V V V nA A A Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Cur...0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device T...
Description	40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 3.3V 36-mc CPLD
File Size	176.68K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGP20N60HS SGW20N60HS
OCR Text	... G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C - 1100 105 64 100 13 170 pF nC nH A 1) Allowed number of short circui...0A 10Hz TC=110C IC, COLLECTOR CURRENT 15s 10A 50s 200s 1A 1ms Ic Ic DC 0,1A 1V 100Hz...
Description	High Speed IGBT in NPT-technology
File Size	429.45K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKW20N60 Q67040-S4242
OCR Text	... G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 M...0A 10Hz TC=110C TC=80C 10A 50s 200s 1A 1ms Ic 0.1A 1V 10V 100V DC 100Hz 1kHz 1...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	272.85K / 14 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	Z00607DA Z00607DA1BA2 Z00607MA Z00607MA1BA2
OCR Text	...(j-l) P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 =30 0.1 0.0 0.0 0.1 =180 =120 =90 =60 180 IT(RMS)(A) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 70 Rth(j-a) 90 =180 Tamb(...
Description	SENSITIVE GATE TRIACS
File Size	63.31K / 4 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SK2677
OCR Text	... Temperature Tc [C] 2SK2677 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2677 100 Safe Operating Area 10 100s...
Description	HVX-2 Series Power MOSFET(900V 10A)
File Size	417.58K / 12 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT5010JN APT5012JN APT5012
OCR Text	...SS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT 5570 1170 440 240 32 116 15 25 48 12 6500 1640 660 370 48 170 30 50 75 25 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Tim...
Description	POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET
File Size	60.42K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	... Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Volta...0A, diF /dt = -15A/S, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, diF /dt = -240A/S, VR = 350...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	... Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Volta...0A, diF /dt = -15A/S, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, diF /dt = -240A/S, VR = 350...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BN APT5022BN
OCR Text	...ATION APT5020/5022BN 20 VGS=6.5, 7, 8, &10V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 16 6V 12 5.5V 20 VGS=10V 8V 16 7V 6.5V 6V 12 5.5V 8 8 4 5V 4.5V 4 5V 4.5V 0 50 100 150 200 250 VDS, DRAIN-TO-SOU...
Description	POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.03K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5025BN APT5030BN
OCR Text	... MAX UNIT 2380 522 196 83 12.6 51 14 27 61 36 2950 730 290 130 19 76 28 55 92 71 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AN...
Description	POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.13K / 4 Page	View it Online	Download Datasheet

For 6.0a 400v Found Datasheets File :: 2353 Search Time::1.406ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |