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600 404 Datasheet PDF File

For 600 404 Found Datasheets File :: 1710 Search Time::1.656ms
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				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	VNB35N07 VNP35N07FI VNV35N07 1612 VNB35N0713TR VNV35N0713TR
OCR Text	... 500 2.7 10 4.3 60 100 Max. 200 600 1000 350 800 4.2 16 6.5 Un it ns ns ns ns ns s s s A/s nC Id = 18 A R gen = 1000 ID = 18 A R gen ...404 0.208 0.624 0.055 0.068 DIM. E C2 L2 A D L L3 B2 B G A1 C P011P6/C 11/13 ...
Description	OMNIFET FULLY AUTOPROTECTED POWER MOSFET "OMNIFET" FULLY AUTOPROTECTED POWER MOSFET ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET From old datasheet system OMNIFET: FULLY AUTOPROTECTED POWER MOSFET ”OMNIFET? FULLY AUTOPROTECTED POWER MOSFET
File Size	139.42K / 13 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	VNP28N04FI VNV28N04 VNB28N04 1645 VNB28N0413TR
OCR Text	... 0 Min. 34 31 -1.1 -0.1 100 200 600 Typ . 42 Max. 51 Un it V V V A A A ON () Symb ol V IN(th) R DS( on) Parameter Input Threshold Voltag...404 0.208 0.624 0.055 0.068 DIM. E C2 L2 A D L L3 B2 B G A1 C P011P6/C 11/13 ...
Description	”OMNIFET? FULLY AUTOPROTECTED POWER MOSFET OMNIFET: FULLY AUTOPROTECTED POWER MOSFET ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET From old datasheet system "OMNIFET" FULLY AUTOPROTECTED POWER MOSFET OMNIFET FULLY AUTOPROTECTED POWER MOSFET
File Size	138.68K / 13 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	VNP49N04FI VNV49N04 VNB49N04
OCR Text	...0 300 1.3 3.8 12 6.1 25 100 Max 600 3600 2400 900 3.8 10.4 24 17 Unit ns ns ns ns s s s s A/s nC 3/14 1 VNP49N04FI / VNB49N04 / VNV...404 0.208 0.625 0.055 0.068 inch D A C A2 DETAIL "A" A1 B2 B G C2 DETAIL "A" E L2 ...
Description	OMNIFET FULLY AUTOPROTECTED POWER MOSFET “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET OMNIFET: FULLY AUTOPROTECTED POWER MOSFET “OMNIFET? FULLY AUTOPROTECTED POWER MOSFET
File Size	131.74K / 14 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	PBU401 PBU403 PBU404 PBU407 PBU406 PBU402 PBU405
OCR Text	... 166 6.3 -65 to +150 PBU 405 600 420 PBU 406 800 560 PBU 407 1000 700 Unit V V A A V A mA A2s C/W C Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Non-repetitive, for t > 1ms and t < 8.3ms. DS2130...
Description	4.0A BRIDGE RECTIFIER
File Size	68.56K / 2 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	STP3015L STB3015 STB3015L 6057
OCR Text	....75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0....
Description	From old datasheet system N - CHANNEL 30V - 0.013 - 40A - D 2 PAK/TO-220 STripFET TM POWER MOSFET N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET -通道30V 0.013欧姆- 40A D2PAK/TO-220 STripFETO的功率MOSFET
File Size	59.32K / 6 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STB45N10L 4857
OCR Text	...A V GS = 0 Min. 20 Typ. 43 3700 600 170 4700 800 230 Max. Unit S pF pF pF 2/6 STB45N10L ELECTRICAL CHARACTERISTICS (continued) SWITCH...404 0.531 0.149 0.054 DIM. A C2 B2 B E L1 L2 D L 4/6 e A1 C STB4...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	86.46K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STB3NA60-1 4890
OCR Text	600 V R DS(on) <4 ID 2.9 A TYPICAL RDS(on) = 0.7 AVALANCHE RUGGED TECHNOLOGY 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TES...404 0.531 0.149 0.054 DIM. A C2 B2 B E L1 L2 D L 8/9 e A1 C STB3...
Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
File Size	114.20K / 9 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STB3NB60 5982
OCR Text	600 V R DS(on) <3.6 ID 3.3 A TYPICAL RDS(on) = 3.3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPAC...404 0.208 0.624 0.055 0.068 DIM. E C2 L2 A D L L3 B2 B G A1 C P011P6/C 7/9 ...
Description	From old datasheet system N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET
File Size	90.97K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STB5NB60
OCR Text	600 V R DS(on) < 2.0 ID 5A TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACIT...404 0.531 0.149 0.055 DIM. A C2 B2 B E L1 L2 D L P011P5/C 7/9 e A1 C...
Description	N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET
File Size	92.07K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics
Part No.	STB60N03L-10 4892
OCR Text	...by T j max, < 1%) Max Value 60 600 150 42 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb...404 0.531 0.149 0.054 DIM. A C2 B2 B E L1 L2 D L 4/6 e A1 C STB6...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PC 3C 38#16 PIN RECP N-CHANNEL Power MOSFET
File Size	86.56K / 6 Page	View it Online	Download Datasheet

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