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  70-190 Datasheet PDF File

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    EPA060B-70 EPA060

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor, Inc.
Part No. EPA060B-70 EPA060
OCR Text ...AND HIGH RELIABILITY EPA060B-70 High Efficiency Heterojunction Power FET ' 0LQ $OO /HDGV 6 6 * Applications * High Dy...190 -1.0 -15 -14 175 * o MAX UNIT dBm dB % dBm dB dB 110 120 250 mA mS -2.5 ...
Description High Efficiency Heterojunction Power FET

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    MSM51V4256A-70 MSM51V4256A MSM51V4256A-10 MSM51V4256A-80

OKI electronic componets
Part No. MSM51V4256A-70 MSM51V4256A MSM51V4256A-10 MSM51V4256A-80
OCR Text ...DUCT FAMILY Family MSM51V4256A-70 MSM51V4256A-80 MSM51V4256A-10 Access Time (Max.) tRAC tAA tCAC tOEA 70 ns 40 ns 25 ns 25 ns 80 ns 45 ns 2...190 ns 162 mW 144 mW 126 mW 1.8 mW 1/17 Semiconductor PIN CONFIGURATION (TOP VIEW) DQ1 1 ...
Description 262,144-Word ′ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
262,144-Word ? 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

File Size 238.14K  /  17 Page

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    IXYS[IXYS Corporation]
Part No. IXKX50N60BU1 IXSK50N60BU1
OCR Text ...S, higher TJ or increased RG 70 70 150 150 3.3 70 70 2.5 230 230 4.8 TO-264 AA Outline 0.15 K/W Reverse Diode (FRED) Symbol V...190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC ...
Description IGBT with Diode

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    COILCRAFT INC
Part No. M0603CS-16NXJ M0603CS-2N2XJ
OCR Text ...000 10000 q factor 100 80 90 60 70 40 50 20 10 30 0 120 nh 33 nh 3.9 nh 68 nh 12 nh 270 nh 10 100 frequency (mhz) inductance (nh) 1000 10000...190 700 violet m0603cs-23nx_ 23 @ 250 mhz 5,2 38 24.1 71 28.0 67 2850 0.190 700 orange m0603cs-24nx_...
Description 1 ELEMENT, 0.016 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD

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    4802-08 4801 4802-01 4802-02 4802-03 4802-04 4802-05 4802-06 4802-07 4807-12 4801-01 4803-01 4803-02 4803-03 4803-04 480

http://
Filtran Ltd.
FILTRAN[Filtran LTD]
Part No. 4802-08 4801 4802-01 4802-02 4802-03 4802-04 4802-05 4802-06 4802-07 4807-12 4801-01 4803-01 4803-02 4803-03 4803-04 4803-05 4803-06 4803-07 4803-08 4803-09 4803-10 4804-01 4804-02 4804-03 4804-04 4804-05 4804-06 4804-07 4804-08 4804-09 4804-10 4805-01 4805-02 4805-03 4805-04 4805-05 4806-01 4806-02 4806-03 4806-04 4806-05 4806-06 4807-01 4807-02 4807-03 4807-04 4807-05 4807-06 4807-07 4807-08 4807-09 4807-10 4807-11
OCR Text ... 30.80 39.50 51.80 65.20 5.35 6.70 10.70 17.40 19.40 26.80 35.00 54.50 85.50 107.00 5.35 6.74 10.70 10.70 11.80 13.40 15.10 3.00 6.00 4.00 2.00 1.00 1.00 1.00 5.00 0.50 8.00 6.00 4.00 3.00 3.00 1.50 1.00 1.00 0.50 0.50 10.00 8.00 5.00 5.00 ...
Description Power Transformers Fully Enclosed

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    HY57V121620 HY57V121620LT-6 HY57V121620LT-8 HY57V121620LT-H HY57V121620LT-K HY57V121620LT-P HY57V121620LT-S HY57V121620T

HYNIX SEMICONDUCTOR INC
Electronic Theatre Controls, Inc.
STMicroelectronics N.V.
Part No. HY57V121620 HY57V121620LT-6 HY57V121620LT-8 HY57V121620LT-H HY57V121620LT-K HY57V121620LT-P HY57V121620LT-S HY57V121620T-6 HY57V121620T-8 HY57V121620T-H HY57V121620T-K HY57V121620T-P HY57V121620T-S HY57V121620LT HY57V121620T
OCR Text ... VDDQ IOS PD TSOLDER Symbol 0 ~ 70 -55 ~ 125 -1.0 ~ 4.6 -1.0 ~ 4.6 50 1 260 10 Rating C C V V mA W C Sec Unit Note : Operation at above...190 290 190 290 190 290 mA mA mA mA 1 2 3 4 Note : 1.IDD1 and IDD4 depend on output l...
Description 32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 8M x 16Bit Synchronous DRAM
SDRAM|4X8MX16|CMOS|TSOP|54PIN|PLASTIC 内存| 4X8MX16 |的CMOS |的TSOP | 54PIN |塑料

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    XD1005-BD-000V XD1005-BD-EV1 XD1005-BD

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MIMIX[Mimix Broadband]
Part No. XD1005-BD-000V XD1005-BD-EV1 XD1005-BD
OCR Text ...in (dB) -20 -30 -40 -50 -60 -70 20 18 16 14 12 10 8 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Frequency (GHz) Vd=3.0V, Id=160 mA Vd=4.0V, Id=180 mA Vd=5.0V, Id=190 mA 8 10 12 14 16 18 20 22 24 26 28 30 32 34 3...
Description 10.0-40.0 GHz GaAs MMIC Distributed Amplifier

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    NTB6410ANT4G NTP6410AN NTP6410ANG NTB6410ANG

ON Semiconductor
Part No. NTB6410ANT4G NTP6410AN NTP6410ANG NTB6410ANG
OCR Text ... 10000 100000 10 20 30 40 50 60 70 80 90 1 0 i dss , leakage (na) t j = 125 c t j = 150 c v gs = 0 v v ds , drain ? to ? source voltage...190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.0...
Description N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
76 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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