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SA103 4963B BU405 MAX2322 DTC14 3D4XATRF 5121M C8015NL
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  70w Datasheet PDF File

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    CMZ5356B CMZ5364B CMZ5349B CMZ5345B CMZ5381B CMZ5346B CMZ5352B CMZ5357B CMZ5359B CMZ5361B CMZ5367B CMZ5388B CMZ5342B CMZ

CENTRAL[Central Semiconductor Corp]
Part No. CMZ5356B CMZ5364B CMZ5349B CMZ5345B CMZ5381B CMZ5346B CMZ5352B CMZ5357B CMZ5359B CMZ5361B CMZ5367B CMZ5388B CMZ5342B CMZ5343B CMZ5344B CMZ5347B CMZ5348B CMZ5350B CMZ5351B CMZ5353B CMZ5354B CMZ5355B CMZ5358B CMZ5360B CMZ5362B CMZ5363B CMZ5365B CMZ5366B CMZ5368B CMZ5369B CMZ5370B CMZ5371B CMZ5372B CMZ5373B CMZ5374B CMZ5375B CMZ5376B CMZ5377B CMZ5378B CMZ5379B CMZ5380B CMZ5382B CMZ5383B CMZ5384B CMZ5385B CMZ5386B CMZ5387B
OCR Text ...VOLTS CMZ5342B* 6.460 CMZ5343B* 7.125 CMZ5344B* 7.790 CMZ5345B* 8.265 CMZ5346B* 8.645 CMZ5347B 9.500 CMZ5348B 10.45 CMZ5349B 11.40 CMZ5350B 12.35 CMZ5351B 13.30 CMZ5352B 14.25 CMZ5353B 15.20 CMZ5354B 16.15 CMZ5355B 17.10 CMZ5356B 18.05 CMZ5...
Description HIGH POWER ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE

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    DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26

DYNEX[Dynex Semiconductor]
Part No. DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26
OCR Text ... = 0.6102629 B = 0.08049203 C = 7.189037 x 10-4 D = -0.01028328 these values are valid for Tj = 125C for IT 500A to 2500A Fig.3 Dissipati...0W 10 W 50 W 20 W 10 5W 10 U 1 rl ppe imi t 99 % Tj = 25C Tj = -40C Regi...
Description Phase Control Thyristor

File Size 114.80K  /  8 Page

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    DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45
OCR Text ...25oC VR = 0 Max. 6.0 0.18 x 106 7.5 0.28 x 106 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side c...0W 15 0W 50 25 W W 10 4W W Total stored charge, QS - (C) Gate trigger voltage, VGT - (V)...
Description Phase Control Thyristor

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3210 --- VGS = 0V 690 --- VDS = 25V 140 --- pF = 1.0MHz, See Fig. 5 1180320 mJ IAS = 50A, L = 260H Typ. --- 0.064 --- --- --- --- --- --- --- --- --- --- 12 78 48 53 D...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 3210 --- VGS = 0V 690 --- VDS = 25V 140 --- pF = 1.0MHz, See Fig. 5 1030250 mJ IAS = 4.3A, L = 270H Typ. --- 0.058 --- --- --- --- --- --- --- --- --- --- 13 76 39 48 ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...--- --- --- --- --- 11 56 45 40 7.5 1900 450 230 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.036 VGS = 10V, ID = 22A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 22A 25 VDS = 100V, VGS = 0V A 2...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...--- --- --- --- 13 77 82 64 4.5 7.5 --- 2500 --- 630 --- 130 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.04 VGS = 10V, ID = 25A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 25A 25 VDS = 10...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF1404L IRF1404S

IRF[International Rectifier]
Part No. IRF1404L IRF1404S
OCR Text ...--- RD = 0.21 Between lead, nH 7.5 --- and center of die contact 7360 --- VGS = 0V 1680 --- VDS = 25V 240 --- pF = 1.0MHz, See Fig. 5 6630 --- VGS = 0V, V DS = 1.0V, = 1.0MHz 1490 --- VGS = 0V, VDS = 32V, = 1.0MHz 1540 --- VGS = 0V, VD...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)

File Size 237.30K  /  10 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...-- 160 35 54 11 150 150 140 4.5 7.5 5600 890 190 5800 560 1100 Max. --- --- 0.0078 4.0 --- 20 250 200 -200 250 52 81 --- --- --- --- --- Units V V/C V S A nA nC ns nH --- --- --- --- --- --- --- pF Conditions VGS = 0V,...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3820 --- VGS = 0V 610 --- VDS = 25V 130 --- pF = 1.0MHz, See Fig. 5 1280340 mJ IAS = 50A, L = 370H Typ. --- 0.074 --- --- --- --- --- --- --- --- --- --- 13 64 49 48 D...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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