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    SPANSION[SPANSION]
Part No. MB84SD23280FE-70 MB84SD23280E-70PBS MB84SD23280Fa MB84SD23280Fa-70PBS MB84SD23280FE
OCR Text ... no change to this datasheet as a result of offering the device as a SPaNSION revisions will occur when appropriate, and changes will be not...70 s FEaTURES * Power supply voltage of 1.65 V to 1.95 V * High performance 70 ns maximum access t...
Description 64M (X16) FLaSH MEMORY 8M (X16) SRaM

File Size 217.39K  /  40 Page

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    SPANSION[SPANSION]
Part No. MB84VD2119XEM-70 MB84VD21181EM-70PBS MB84VD21182EM-70PBS MB84VD21183EM-70PBS MB84VD21184EM-70PBS MB84VD2118XEM-70 MB84VD21191EM-70PBS MB84VD21192EM-70PBS MB84VD21193EM-70PBS MB84VD21194EM-70PBS
OCR Text ...f HiddenROM, accessible through a new "HiddenROM Enable" command sequence Factory serialized and protected to provide a secure electronic se...70 s PIN aSSIGNMENT (Top View) Marking side B8 a15 a7 a11 a6 a8 a5 WE a4 B7 a12 B6 a19 B5 CE2...
Description Stacked MCP (Multi-Chip Package) FLaSH MEMORY & SRaM CMOS

File Size 296.23K  /  52 Page

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    N16T1630C2BZ2-70 N16T1630C2B N16T1630C2BZ N16T1630C2BZ2 N16T1630C2BZ2-55 N16T1630C2BZ-55 N16T1630C2BZ-70

Electronic Theatre Controls, Inc.
NANOAMP[NanoAmp Solutions, Inc.]
etc
Part No. N16T1630C2BZ2-70 N16T1630C2B N16T1630C2BZ N16T1630C2BZ2 N16T1630C2BZ2-55 N16T1630C2BZ-55 N16T1630C2BZ-70
OCR Text ...grated memory device containing a low power 16 Mbit SRaM built using a self-refresh DRaM array organized as 1,024,576 words by 16 bits. It i...70 ns Cycle Time2 Maximum Standby Current Symbol VCC VIH VIL VOH VOL ILI ILO ICC1 ICC2 IOH = -0.2ma ...
Description 16Mb Ultra-Low Power asynchronous CMOS SRaM 16Mb的超低功耗CMOS SRaM的异
From old datasheet system

File Size 172.76K  /  9 Page

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    NT511740C5J-70 NT511740C5J NT511740C5J-50 NT511740C5J-60

List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Part No. NT511740C5J-70 NT511740C5J NT511740C5J-50 NT511740C5J-60
OCR Text ...DESCRIPTION The NT511740C5J is a 4,194,304-word x 4-bit dynamic RaM fabricated in NTC's CMOS silicon gate technology. The NT511740C5J achie...70 t Ra C ta a 50ns 25ns 60 ns 30 ns 70 ns 35 ns t Ca C 13ns 15 ns 20 ns t O Ea 13ns 15 ns 20 ns (M ...
Description The NT511740C5J is a 4,194,304-word x 4-bit dynamic RaM fabricated in NTCs CMOS silicon gate technology. 该NT511740C5J194304字4位动态随机存储器的NTC热敏假的吗?拧CMOS硅栅技术

File Size 333.64K  /  18 Page

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    SEOUL[Seoul Semiconductor]
Part No. SSC-NB104-70 SSC-NB104
OCR Text ...and quantity to be indicated on a damp proof Package. SSC-QP-0401-06(REV.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-...70 Lot N o ######### :4000 aluminum Vinyl Bag P/N : # # # # # # # # # # ### SSC...
Description CHIP LED DEVICE

File Size 343.40K  /  9 Page

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    SST[Silicon Storage Technology, Inc]
Part No. SST31LF043a-70-4E-WI SST31LF041 SST31LF041-300-4C-WH SST31LF041-300-4C-WI SST31LF041-300-4E-WH SST31LF041-300-4E-WI SST31LF041-70-4C-WH SST31LF041-70-4C-WI SST31LF041-70-4E-WH SST31LF041-70-4E-WI SST31LF041a SST31LF041a-300-4C-WH SST31LF041a-300-4C-WI SST31LF041a-300-4E-WH SST31LF041a-300-4E-WI SST31LF041a-70-4C-WH SST31LF041a-70-4C-WI SST31LF041a-70-4E-WH SST31LF041a-70-4E-WI SST31LF043 SST31LF043-300-4C-WH SST31LF043-300-4C-WI SST31LF043-300-4E-WH SST31LF043-300-4E-WI SST31LF043-70-4C-WH SST31LF043-70-4C-WI SST31LF043-70-4E-WH SST31LF043-70-4E-WI SST31LF043a SST31LF043a-300-4C-WH SST31LF043a-300-4C-WI SST31LF043a-300-4E-WH SST31LF043a-300-4E-WI SST31LF043a-70-4C-WH SST31LF043a-70-4E-WH
OCR Text ...SRaM Read - Standby Current: 10 a (typical) * Flash Sector-Erase Capability - Uniform 4 KByte sectors * Latched address and Data for Flash * Fast Read access Times: - SST31LF041/043 Flash: 70 ns SRaM: 70 ns - SST31LF041a/043a Flash: 300 ns ...
Description 4 Mbit Flash 1 Mbit or 256 Kbit SRaM ComboMemory

File Size 294.58K  /  26 Page

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    SST[Silicon Storage Technology, Inc]
Part No. SST32HF802-70-4E-LBKE SST32HF202 SST32HF202-70-4C-L3K SST32HF202-70-4C-L3KE SST32HF202-70-4E-L3K SST32HF202-70-4E-L3KE SST32HF402 SST32HF402-70-4C-L3K SST32HF402-70-4C-L3KE SST32HF402-70-4E-L3K SST32HF402-70-4E-L3KE SST32HF802 SST32HF802-70-4C-L3K SST32HF802-70-4C-L3KE SST32HF802-70-4C-LBK SST32HF802-70-4C-LBKE SST32HF802-70-4E-L3K SST32HF802-70-4E-L3KE SST32HF802-70-4E-LBK
OCR Text ...SRaM Read - Standby Current: 20 a (typical) * Flexible Erase Capability - Uniform 2 KWord sectors - Uniform 32 KWord size blocks * Fast Read access Times: - Flash: 70 ns - SRaM: 70 ns * Latched address and Data for Flash * Flash Fast Erase ...
Description Multi-Purpose Flash (MPF) SRaM ComboMemory

File Size 392.42K  /  30 Page

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    SST[Silicon Storage Technology, Inc]
Part No. SST34HF32a4-70-4E-LSE SST34HF32a4 SST34HF32a4-70-4E-L1PE
OCR Text ...(typical) - Standby Current: 70 a (typical) * Hardware Sector Protection (WP#) - Protects 8 KWord in the smaller bank by holding WP# low and unprotects by holding WP# high * Hardware Reset Pin (RST#) - Resets the internal state machine to r...
Description 32 Mbit Concurrent SuperFlash 16 Mbit PSRaM ComboMemory

File Size 743.06K  /  37 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TC55W1600FT-70 TC55W1600FT TC55W1600FT-55
OCR Text ...DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory (SRaM) organized as 1,048,576 words by 16 bits/2,097,152 words ...70 70 ns 70 ns 70 ns 35 ns 55 ns 55 ns 55 ns 30 ns CE2 access Time OE access Time * Pac...
Description 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STaTIC RaM

File Size 198.22K  /  13 Page

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