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    HY29F040AC-55I

Hynix Semiconductor
Part No. HY29F040AC-55I
Description 512k x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns
File Size 285.55K  /  40 Page

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    5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 5962L9960701QXA 5962L9960701QXC 5962L9960701QXX 5962L9960701TUA 5962L996

Aeroflex Circuit Technology
Part No. 5962L9960701QUA 5962L9960701QUC 5962L9960701QUx 5962L9960701QxA 5962L9960701QxC 5962L9960701Qxx 5962L9960701TUA 5962L9960701TUC 5962L9960701TUx 5962L9960701TxA 5962L9960701TxC 5962L9960702QUA 5962L9960701Txx 5962L9960702QUC 5962L9960702QUx 5962L9960702QxA 5962L9960702QxC 5962L9960702Qxx 5962L9960702TUA 5962L9960702TUC 5962L9960702TUx 5962D9960703TxC 5962D9960701TxC 5962D9960702TxC 5962D9960704TxC 5962L9960702TxC 5962L9960703TxC 5962L9960704TxC 5962P9960701TxC 5962P9960702TxC 5962D9960701QUA 5962D9960701QUC 5962D9960701QUx 5962D9960701QxA 5962D9960701QxC 5962D9960701TUA 5962D9960701Qxx 5962D9960701TUC 5962D9960701TUx 5962P9960701TxA 5962D9960701TxA 5962D9960704TUA 5962D9960702TUA 5962P9960703TxC UT8Q512-UWx 5962D9960704TxA 5962D9960702Txx 5962D9960704Txx 5962L9960702Txx 5962P9960701TUA 5962P9960701TUx 5962P9960701TUC 5962D9960703TUC 5962L9960703TUC 5962L9960704TUC 5962P9960702TUC 5962P9960703TUC UT8Q512-20UWC UT8Q512-UWC 5962D9960703TUx 5962D9960704QxA 5962D9960704QxC 5962D9960704Qxx
Description 512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
512k x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
512k x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
512k x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512k x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
512k x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow.
512k x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
512k x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
512k x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow.
512k x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow.
512k x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512k x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
512k x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
File Size 127.88K  /  15 Page

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    IRLU3410PBF

International Rectifier
Part No. IRLU3410PBF
Description Asynchronous SRAM; Organization (word): 512k; Organization (bit): x 8; Memory capacity (bit): 4M; access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:  
File Size 283.97K  /  11 Page

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    5962H3829435BNC 5962H3829435BNX 5962H3829435BXA 5962H3829435BXC 5962H3829435BXX 5962H3829435SNA 5962H3829435SNC 5962H382

Aeroflex Circuit Technology
Part No. 5962H3829435BNC 5962H3829435BNx 5962H3829435BxA 5962H3829435BxC 5962H3829435Bxx 5962H3829435SNA 5962H3829435SNC 5962H3829435SNx 5962H3829435SxA 5962H3829435SxC 5962H3829436BNA 5962H3829436BNC 5962H3829436BNx 5962H3829436BxA 5962H3829436BxC 5962H3829436Bxx 5962H3829436SNA 5962H3829436SNC 5962H3829436SNx 5962H3829436SxA 5962H3829436SxC 5962H3829436Sxx 5962H3829437BNA 5962H3829437BNC 5962H3829437BxC 5962H3829437Bxx 5962R3829435BNx 5962R3829436BNx 5962R3829437BNx 5962R3829435SNA 5962R3829435SNC 5962R3829435SNx 5962H3829437SNC 5962R3829436SNC 5962R3829437SNC 5962H3829437Sxx 5962R3829435Sxx 5962R3829437Sxx 5962R3829436Sxx 5962R3829436SNA 5962R3829436SNx 5962R3829436SxA 5962R3829435BNA 5962R3829435BNC 5962R3829437BNC 5962R3829437BNA 5962R3829435SxC 5962R3829435SxA 5962R3829437SNx 5962H3829437SNx 5962R3829436BNA 5962R3829437SxC 5962R3829437SxA 5962H3829437SxC 5962H3829437SxA 5962R3829435BxA 5962R3829435Bxx 5962R3829435BxC 5962H3829437SNA 5962R3829436BxA 5962R3829437Bxx
Description Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish solder.
File Size 99.86K  /  15 Page

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    5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 5962D9960601TUA 5962D9960601TUC 5962D9960601TUX 5962D9960602QUA 5962D996

Aeroflex Circuit Technology
Part No. 5962D9960601QUA 5962D9960601QUC 5962D9960601QUx 5962D9960601TUA 5962D9960601TUC 5962D9960601TUx 5962D9960602QUA 5962D9960602QUC 5962D9960602QUx 5962D9960602TUA 5962D9960602TUx 5962D9960602TUC 5962-9960601TUA 5962-9960602TUx 5962-9960601TUC 5962P9960601TUA 5962P9960601TUC 5962P9960601TUx UT7Q512k-UPx UT7Q512k-UWC
Description 512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512k x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512k x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512k x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
File Size 106.53K  /  16 Page

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    Alliance Semiconductor
Part No. AS29LV400T-90TI
Description 3V 512k x 8/256K x 16 CMOS flash EEPROM, 90ns access time
File Size 211.66K  /  24 Page

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    Spansion, Inc.
SPANSION LLC
Part No. AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WCF AM29LV800DB-90WCC AM29LV800DT-90ED AM29LV800DB-90ED AM29LV800DT-120EC AM29LV800DT-90WCF AM29LV800DB-120SD AM29LV800DB-90SF SPANSIONLLC-AM29LV800DB-70WCD AM29LV800DB-120SC
Description Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; access time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512k x 16 FLASH 3V PROM, 70 ns, PDSO48
512k x 16 FLASH 3V PROM, 90 ns, PDSO48
512k x 16 FLASH 3V PROM, 70 ns, PBGA48
512k x 16 FLASH 3V PROM, 90 ns, PBGA48
512k x 16 FLASH 3V PROM, 120 ns, PDSO48
512k x 16 FLASH 3V PROM, 120 ns, PDSO44
512k x 16 FLASH 3V PROM, 90 ns, PDSO44
File Size 751.64K  /  46 Page

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    5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 5962D0053601TXC 5962D0053602QXA 5962D0053602TUC 5962D0053602QXC 5962D005

Aeroflex Circuit Technology
Part No. 5962D0053601QUA 5962D0053601TxA 5962D0053602TxA 5962D0053601TxC 5962D0053602QxA 5962D0053602TUC 5962D0053602QxC 5962D0053603QUA 5962D0053601TUA 5962D0053601Qxx 5962D0053601TUC 5962D0053601TUx 5962D0053602TUx 5962D0053602QUx 5962D0053602Txx 5962D0053602Qxx 5962D0053602QUA 5962D0053601QxA 5962D0053601Txx 5962D0053602QUC 5962D0053602TxC 5962D0053601QxC 5962D0053602TUA 5962D0053601QUx 5962D0053601QUC 5962D0053603QUx 5962D0053603QxA 5962D0053603Qxx 5962D0053603QxC 5962D0053603QUC UT9Q512-IWx UT9Q512-IWC UT9Q512-20ICC UT9Q512-20ICx UT9Q512-20IPC UT9Q512-20IWC UT9Q512-20UCC UT9Q512-20UCA UT9Q512-20UCx UT9Q512-20UWA UT9Q512-ICA UT9Q512-IPC UT9Q512-20ICA UT9Q512-20IWA UT9Q512-20IWx UT9Q512-20UPC UT9Q512-20UWC UT9Q512-20UWx UT9Q512-ICC UT9Q512-ICx UT9Q512-IWA UT9Q512-UCA 5962D0053603TxC 5962D0053604TxC 5962L0053601TxC 5962L0053602TxC 5962L0053603TxC 5962L0053604TxC 5962P0053601TxC 5962P0053602TxC 5962P0053603TxC 5962P0053604TxC 5962L0053601QUA 5962L0053601QUC 5962L0053601QUx 5962L0053601QxA 5962L0053601QxC 5962L0053601Qxx 5962L0053601TUA 5962L0053601TUC 5962L0053601TUx 5962L0053601Txx 5962L0053602QUA 5962L0053602QUC 5962L0053602QUx 5962L0053602QxA 5962L0053602QxC 5962L0053602TUA 5962L0053602
Description 512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option.
512k x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold.
512k x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold.
512k x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option.
512k x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512k x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped.
512k x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped.
512k x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512k x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512k x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)).
File Size 128.60K  /  15 Page

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    Spansion, Inc.
SPANSION LLC
Part No. AM29F040B-120JF AM29F040B-90ED
Description Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512k x 8; Package/Case:32-PLCC; Supply Voltage Max:5.5V; access time, Tacc:120ns; Mounting Type:Surface Mount RoHS Compliant: Yes 512k x 8 FLASH 5V PROM, 120 ns, PQCC32
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512k x 8; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; access time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes
File Size 564.73K  /  36 Page

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    Spansion, Inc.
Part No. AM29F400BT-120ED AM29F400BT-55ED AM29F400BB-55SD
Description Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; access time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes 256K x 16 FLASH 5V PROM, 120 ns, PDSO48
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; access time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes 256K x 16 FLASH 5V PROM, 55 ns, PDSO48
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; access time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes 256K x 16 FLASH 5V PROM, 55 ns, PDSO44
File Size 584.10K  /  43 Page

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