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  alumina Datasheet PDF File

For alumina Found Datasheets File :: 4582    Search Time::1.172ms    
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    2N7002LT1 ON0106

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
http://
Part No. 2N7002LT1 ON0106
OCR Text ...mbient Total Device Dissipation alumina Substrate,(4) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RJA PD Max 225 1.8 556 300 2.4 RJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C/W...
Description CASE 318-08, STYLE 21 SOT-23 (TO-236AB) 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
From old datasheet system

File Size 92.99K  /  6 Page

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    2N7002LT3 2N7002LT1 L2N7003LT1

http://
LRC[Leshan Radio Company]
Leshan Radio Company, Ltd.
Part No. 2N7002LT3 2N7002LT1 L2N7003LT1
OCR Text ...mbient Total Device Dissipation alumina Substrate,(Note 4.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 RJA TJ, Tstg 417 -55 to +150 C/W C Unit mW mW/C...
Description Small Signal MOSFET 115 mAmps 60 Volts
Small Signal MOSFET 115 mAmps/ 60 Volts
Small Signal MOSFET 115 mAmps, 60 Volts 小信号MOSFET 115 mAmps0伏特

File Size 142.51K  /  3 Page

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    2N7002L 2N7002LT1G 2N7002LT3G 2N7002LT3 2N7002LT1

ONSEMI[ON Semiconductor]
http://
Part No. 2N7002L 2N7002LT1G 2N7002LT3G 2N7002LT3 2N7002LT1
OCR Text ...mbient Total Device Dissipation alumina Substrate,(Note 4) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 RqJA TJ, Tstg 417 -55 to +150 C/W C 702 W Unit m...
Description Small Signal MOSFET 115 mA, 60 Volts
Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23
Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
Small Signal MOSFET 60 V 115 mA N−Channel SOT−23

File Size 58.74K  /  4 Page

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    TY Semiconductor Co., Ltd
Part No. MMBTA20
OCR Text ...556 /w total device dissipation alumina substrate, (* 2) @t a =25 derate above 25 p d 300 2.4 mw mw/ thermal resistance, junction-to-ambient r ja 417 /w junction temperature t j 150 storage temperature t stg -55to+150 * 1. fr-5 = 1.0 x 0.75...
Description General Purpose Amplifier.

File Size 65.23K  /  1 Page

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    2SJ244

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SJ244
OCR Text ...duty cycle 10% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) 3. Marking is "JY". Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source cutoff current Symbo...
Description Silicon P-Channel MOS FET

File Size 44.24K  /  8 Page

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    BZX84C6V2 BZX84C5V1 BZX84C4V7 BZX84C12 BZX84C18 BZX84C11 BZX84C7V5 BZX84C39 BZX84C51 BZX84C2V7 BZX84C9V1 BZX84C5V6 BZX84

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie...
Part No. BZX84C6V2 BZX84C5V1 BZX84C4V7 BZX84C12 BZX84C18 BZX84C11 BZX84C7V5 BZX84C39 BZX84C51 BZX84C2V7 BZX84C9V1 BZX84C5V6 BZX84C47 BZX84C3V3 BZX84C27 BZX84C2V4 BZX84C4V3
OCR Text ...mbient Total Device Dissipation alumina Substrate,** TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temeprature 1. FR-5 = 1.0 X 0.75 X 0.062 in. Symbol PD Max 350 1.8 RJA PD 556 350 2.4 RJA TJ, Tstg 41...
Description Surface Mount Zener Voltage Regulator Diodes

File Size 277.21K  /  4 Page

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    SMMBT5401LT1G

ON Semiconductor
Part No. SMMBT5401LT1G
OCR Text ...6 c/w total device dissipation alumina substrate (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ...
Description High Voltage Transistor PNP Silicon
   High Voltage Transistor PNP Silicon

File Size 113.57K  /  6 Page

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    SENSITRON SEMICONDUCTOR
Part No. SHD117245PA
OCR Text ...010 (.508?254) .110 (2.80) max alumina ring terminal 1 2 3 .290?010 (7.37?254) .350?010 (8.89?254) .065?010 (1.65?254) .110 (2.79) max alumina ring .440?020 (11.2?508) .185?010 (4.70?254) .020?010 (.508?254) moly lid moly base term...
Description HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop

File Size 46.82K  /  3 Page

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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text ... duty cycle 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain curr...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.90K  /  8 Page

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