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For at-strip Found Datasheets File :: 4845 Search Time::1.813ms
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				STMicroelectronics N.V. 意法半导 SGS Thomson Microelectronics
Part No.	IRF740S 6111
OCR Text	...tage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Tem...
Description	N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.48Ω- 10A条，采用D2PAK PowerMESHTM MOSFET的（不适用沟道MOSFET的） N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET) From old datasheet system N - CHANNEL 400V - 0.48 - 10 A -D 2 PAK PowerMESH TM MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET N - CHANNEL 400V - 0.48 Ohm -10 A -D 2 PAK PowerMESH MOSFET
File Size	92.44K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	IRF740 3010 -IRF740
OCR Text	...tage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Te...
Description	N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET -频道400V - 0.48欧姆- 1020 PowerMESH] MOSFET From old datasheet system N - CHANNEL 400V - 0.48 - 10 A - TO-220 PowerMESH TM MOSFET N - CHANNEL 400V - 0.48 Ohm - 10 A - TO-220 PowerMESH MOSFET
File Size	92.17K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PDTC114Y PDTC114YEF PDTC114YK PDTC114YM PDTC114YS PDTC114YU PDTC114YT PDTC114YE PDTC114YEF115
OCR Text	...ementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from t...
Description	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PLASTIC, SC-89, 3 PIN NPN resistor-equipped transistors
File Size	84.19K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PDTC143Z PDTC143ZE PDTC143ZEF PDTC143ZM PDTC143ZS PDTC143ZU PDTC143ZT PDTC143ZK
OCR Text	...ementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from t...
Description	NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN resistor-equipped transistors; R1 = 4.7 kW R2 = 47 kW NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW
File Size	84.90K / 14 Page	View it Online	Download Datasheet

				SIPEX[Sipex Corporation]
Part No.	SP4412 SP4412A SP4412ACN SP4412ACU SP4412ACX
OCR Text	...ctional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is...strip of plastic that is coated with a phosphorous material which emits light (fluoresces) when a hi...
Description	Electroluminescent Lamp Driver
File Size	119.39K / 10 Page	View it Online	Download Datasheet

				SIPEX[Sipex Corporation]
Part No.	SP4422 SP4422A SP4422ACN SP4422ACU SP4422ACX SP4422ANEB SP4422AUEB SP4422NEB SP4422UEB
OCR Text	...ctional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is...strip of plastic that is coated with a phosphorous material which emits light (fluoresces) when a hi...
Description	Electroluminescent Lamp Driver IC,BALLAST/BACKLIGHT CONTROLLER/DRIVER,BIPOLAR/MOS,SOP,8PIN,PLASTIC
File Size	136.95K / 13 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	at 4 GHz * Low Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1 dB at ...STRIP For more information, see "Tape and Reel Packaging for Semiconductor Devices." ATF-10136...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text	at 4 GHz * Low Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1dB at 4...STRIP For more information, see "Tape and Reel Packaging for Semiconductor Devices." ATF-10236...
Description	ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
File Size	42.09K / 3 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text	...ssociated Gain: 13.0 dB Typical at 4 GHz * Low Bias: VDS = 2 V, IDS = 25 mA * High Output Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Nois...STRIP For more information, see "Tape and Reel Packaging for Semiconductor Devices." ATF-10736...
Description	0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
File Size	44.24K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	at 12 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effective Ceramic M...strip ATF-13336 Noise Parameters: VDS = 2.5 V, IDS = 20 mA Freq. GHz 4.0 6.0 8.0 12.0 14.0 NFO d...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

For at-strip Found Datasheets File :: 4845 Search Time::1.813ms
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