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Motorola, Inc.
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| Part No. |
MRF6522-60
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| OCR Text |
...dc drain current e continuous i d 7 adc total device dissipation @ t c > = 25 c derate above 25 c p d 118 0.9 watts w/ c storage tempera...60 w, 960 mhz lateral nchannel broadband rf power mosfet case 360b03, style 1 ? motorola, inc. 1999... |
| Description |
RF MOSFETS(RF MOS场效应管)
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| File Size |
189.33K /
12 Page |
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it Online |
Download Datasheet
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ROHM[Rohm]
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| Part No. |
RB225T-60
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| OCR Text |
...:Rth (/W)
40
1ms time
DC D=1/2
10
300us
FORWARD POWER DISSIPATION:Pf(W)
Rth(j-a)
30 Sin(180) 20
100
1
Rth(j-c...60
Diodes
30 80 70 80 0A 0V Io 70 0A 0V DC T D=1/2 Sin(180) Io t VR D=t/T VR=30V Tj=150
AVERAGE... |
| Description |
Schottky barrier diode
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| File Size |
193.61K /
4 Page |
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it Online |
Download Datasheet |
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ROHM[Rohm]
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| Part No. |
RB215T-60
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| OCR Text |
...(W)
300us 1ms
Rth(j-a)
D=1/2 20 Sin(180)
DC
100
1
Rth(j-c)
10
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0....60
Diodes
15
50
50 0A 0V DC Io t T VR D=t/T VR=30V Tj=150 40 DC 30 D=1/2 20 10 Sin(180) 0 ... |
| Description |
Schottky barrier diode
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| File Size |
173.63K /
4 Page |
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it Online |
Download Datasheet |
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ROHM[Rohm]
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| Part No. |
RB205T-60
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| OCR Text |
...
20
IM=100mA time
IF=7.5A D=1/2 FORWARD POWER DISSIPATION:Pf(W) Rth(j-a)
300us 10 1ms
DC
Sin(180) 10
100
1
Rth(j-c)
...60
Diodes
5 40 0A 0V 30 DC 20 D=1/2 Io VR D=t/T VR=30V Tj=150 40 0A 0V Io t T VR D=t/T VR=30V Tj=1... |
| Description |
Schottky barrier diode
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| File Size |
191.01K /
4 Page |
View
it Online |
Download Datasheet |
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ROHM[Rohm]
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| Part No. |
RB095B-60
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| OCR Text |
...
10 Rth(j-c) 1
6 Sin(180)
D=1/2
DC
4
2
AVE:77.0A
0.1 0.001
0.01
1 10 100 TIME:t(s) Rth-t CHARACTERISTICS
0.1
...60
Diodes
15 15 0A 0V Sin(180)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
15 Io t T D=1/2 VR D=t/... |
| Description |
Schottky barrier diode
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| File Size |
260.10K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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