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Motorola
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| Part No. |
P4N80E
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| OCR Text |
...in addition, this advanced tmos efet is designed to withstand high energy in the avalanche and commutation modes. the new energy efficient design also offers a draintosource diode with a fast recovery time. designed for high voltage, high s... |
| Description |
Search --To MTP4N80E
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| File Size |
168.69K /
8 Page |
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it Online |
Download Datasheet
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Motorola
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| Part No. |
24N40E
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| OCR Text |
...in addition, this advanced tmos efet is designed to withstand high energy in the avalanche and commutation modes. the new energy efficient design also offers a draintosource diode with a fast recovery time. designed for high voltage, high s... |
| Description |
Search --To MTW24N40E
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| File Size |
152.88K /
8 Page |
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it Online |
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TriQuint Semiconductor,Inc.
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| Part No. |
TQTRX
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| OCR Text |
...6 -4 -2 0 2 4 6 s21 s11 s22 efet 300 um vds=3v 50% idmax freq (0.1ghz to 26.1ghz) s12 / .05 -4 -3 -2 -1 0 1 2 3 4 s21 s11 s22 dfet 300 um vds=3v 50% idss freq (0.1ghz to 26.1ghz) s12 / .05 -4 -3 -2 -1 0 1 2 3 4 ... |
| Description |
Advanced Passives & MESFET Foundry Service
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| File Size |
166.57K /
6 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
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| Part No. |
TQPED
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| OCR Text |
...ture range -55 to +150 deg c efet/dfet transistor (vs open; idg = 1ua/um) 15 v capacitor 40 v page 2 of 3; rev 1.0 12/1/2004 pre-production process
design tool status ? complete design manual now ? device library of ci... |
| Description |
nullPrecision, 100UA Gain Selectable Amplifier nullPrecision00uA的可选增益放大器
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| File Size |
93.71K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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