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NXP Semiconductors N.V.
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Part No. |
BUK6207-55C
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OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
Description |
N-channel TrenchMOS intermediate level FET
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File Size |
140.52K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
BUK6210-55C
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OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
Description |
N-channel TrenchMOS intermediate level FET
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File Size |
181.53K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
BUK6217-55C
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OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
Description |
N-channel TrenchMOS intermediate level FET
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File Size |
190.57K /
14 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
BUK6226-75C BUK6226-75C-15
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OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
Description |
N-channel TrenchMOS FET N-channel TrenchMOS FET Rev. 01 ?4 October 2010
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File Size |
187.77K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
BUK624R5-30C
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OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
Description |
N-channel TrenchMOS intermediate level FET
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File Size |
177.31K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
BUK626R2-40C BUK626R2-40C-15
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OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
Description |
N-channel TrenchMOS intermediate level FET
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File Size |
183.45K /
14 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
BUK653R2-55C
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OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
Description |
N-channel TrenchMOS intermediate level FET
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File Size |
164.39K /
14 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
BUK653R3-30C
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OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
Description |
N-channel TrenchMOS intermediate level FET
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File Size |
159.12K /
14 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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