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Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
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| Part No. |
CY7C1515AV18-200BZXI CY7C1526AV18-278BZXC CY7C1526AV18-250BZI CY7C1526AV18-300BZI CY7C1526AV18-250BZXI
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| OCR Text |
... to v dd available in 165-ball fbga package (15 x 17 x 1.4 mm) offered in both pb-free and non pb-free packages variable drive hstl outpu...1020 950 865 715 615 x36 1230 1140 1040 850 725 [+] feedback [+] feedback
cy7c1511av18, cy7c1526... |
| Description |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
8M X 9 QDR SRAM, 0.45 ns, PBGA165
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| File Size |
485.08K /
31 Page |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1163V18-400BZC
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| OCR Text |
...v dd [1] available in 165-ball fbga package (13 x 15 x 1.4 mm) offered in both pb-free and non pb-free packages variable drive hstl outpu...1020 920 850 ma note 1. the qdr consortium specification for v ddq is 1.5v + 0.1v. the cypress qdr... |
| Description |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 QDR SRAM, 0.45 ns, PBGA165
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| File Size |
461.23K /
29 Page |
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it Online |
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Samsung Electronics
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| Part No. |
K9F1G08R0B
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| OCR Text |
...rogram timing is eliminated 1. fbga package is added 1. tcs 31ns -> 25ns, treh 15ns -> 10ns draft date oct.30th, 2006 dec. 28th 2006 april ...1020 ma program i cc 2- erase i cc 3- stand-by current(ttl) i sb 1ce =v ih , wp =0v/v cc --1 stand-b... |
| Description |
FLASH MEMORY
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| File Size |
740.08K /
34 Page |
View
it Online |
Download Datasheet |
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